Cold cathode field emission device and process for the production thereof, and cold cathode field em

专利摘要:
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light and extending in the first direction; (B) forming an insulating layer composed of a photosensitive material that transmits the exposure light on the entire surface; and (C) a gate electrode composed of the photosensitive material on the insulating layer and extending in a second direction different from the first direction. And (D) exposing exposure light from the back side of the support member through the hole as an exposure mask to expose the insulating layer and the gate electrode on the hole, and developing the insulating layer and the gate electrode to By removing the insulating layer and the gate electrode at the portion, an opening having a diameter larger than the diameter of the hole is formed through the insulating layer and the gate electrode over the hole, and at the bottom of the opening Exposing a part, (E) forming an electron-emitting part forming layer made of a photosensitive material in at least an opening, and (F) irradiating the exposure light from the back side of the support member through the hole as a mask for exposure. And exposing the electron emitting portion forming layer on the hole, and then developing the electron emitting portion forming layer to form an electron emitting portion formed on the cathode electrode and the electron emitting portion forming layer in the hole. do.
公开号:KR20030078024A
申请号:KR10-2003-0018995
申请日:2003-03-26
公开日:2003-10-04
发明作者:모토히로 도요타；이치로 사이토；도시키 시마무라；마사카즈 무로야마
申请人:소니 가부시끼 가이샤；
IPC主号:

专利说明:

Cold cathode field emission device and process for manufacturing it and cold cathode field emission device and method for manufacturing thereof and cold cathode field emission display and process for the production
[37] The present invention relates to a cold cathode field emission device, a fabrication method thereof, and a cold cathode field emission display device and a fabrication method thereof.
[38] In the field of display devices used in television receivers and information terminal equipment, flat panel (flat panel type) display devices that can meet the requirements of thickness reduction, weight reduction, large screen, and high definition from conventional mainstream cathode ray tubes (CRT). Is being studied. Such flat display devices include a liquid crystal display (LCD), an electroluminescent display (ELD), a plasma display (PDP), and a cold cathode field emission display (FED). Among these, liquid crystal display devices are widely used as display devices for information terminal devices. However, when attempted to be applied to fixed television receivers, there is still a problem to be solved in achieving high brightness or large screen. On the other hand, the cold cathode field emission display device is a cold cathode field emission device capable of emitting electrons from a solid in a vacuum based on the quantum tunnel effect without thermal excitation (hereinafter, referred to as "field emission device"). Sometimes called). The cold cathode field emission display has attracted great attention in consideration of high brightness and low power consumption.
[39] 32 and 33 show an example of a cold cathode field emission display device (hereinafter sometimes referred to as " display device ") having a field emission device. FIG. 32 is a schematic partial cross-sectional view of a conventional display device, and FIG. 33 is a schematic partially exploded perspective view of a cathode panel CP and an anode panel AP.
[40] Each of the field emission devices shown in Fig. 32 is a field emission device called a Spindt type field emission device having a conical electron emission section. The field emission device includes a cathode electrode 111 formed on the support member 110, an insulation layer 112 formed on the support member 110 and the cathode electrode 111, and a gate formed on the insulation layer 112. Opening 114 made through electrode 113, gate electrode 113 and insulating layer 112 (first opening 114A made through gate electrode 113 and second made through insulating layer 112) The opening 114B and the conical electron emitting portion 115A formed on the cathode electrode 111 located at the bottom of the second opening 114B. In general, the cathode electrode 111 and the gate electrode 113 are each formed in a stripe shape in the direction in which the four images of the electrodes cross each other, and a plurality of field emission in the region where the four images of the electrodes overlap each other. An element is installed. Such an area corresponds to an area occupying one pixel, and is called a "duplicate area" or "electron emission area". In addition, these electron emission regions are arranged in a two-dimensional matrix in the effective region (the region serving as the actual display portion) of the cathode panel CP.
[41] On the other hand, the anode panel AP is formed of the substrate 30, the phosphor layers 31 (31R, 31B, 31G) formed on the substrate 30 and having a predetermined pattern, and the anode electrode 33 formed thereon. Consists of. One pixel is composed of a group of field emission elements formed in the overlapping region of the cathode electrode 111 and the gate electrode 113 on the cathode panel side and the phosphor layer 31 on the anode panel side facing the group of field emission elements. . In the effective area, such pixels are arranged in orders of several hundred thousand to several million, for example. The black matrix 32 is formed on the substrate 30 appearing between the phosphor layers 31.
[42] The display device can be fabricated by arranging the anode panel AP and the cathode panel CP so that the electron emission region and the phosphor layer 31 face each other and are bonded to each other through the frame 34 at the periphery. A through hole 36 for vacuum is provided in an invalid area (a void area of the cathode panel CP in the example shown) surrounding the effective area and having a peripheral circuit for selecting pixels, and is sealed after the vacuum exhaust. 37 is connected to the through hole 36. That is, the space enclosed by the anode panel AP, the cathode panel CP, and the frame 34 is constituted by a vacuum.
[43] A negative voltage relative to the cathode electrode 111 is applied from the cathode electrode control circuit 40, a constant voltage relative to the gate electrode 113 is applied from the gate electrode control circuit 41, and a voltage applied to the gate electrode 113. Even higher constant voltage is applied from the anode electrode control circuit 42 to the anode electrode 33. When such a display device performs display, for example, a scan signal is input to the cathode electrode 111 from the cathode electrode control circuit 40 and a video signal is input to the gate electrode 113 from the gate electrode control circuit 41. do. The electric field generated by the voltage applied to the cathode electrode 111 and the gate electrode 113 causes the electron emission unit 115A to emit electrons based on the quantum tunnel effect, and the electrons are attracted to the anode electrode 33. It is pulled and impinges on the phosphor layer 31. As a result, the phosphor layer 31 is excited to emit light, thereby obtaining a desired image. That is, the operation of the display device is basically controlled by the voltage applied to the gate electrode 113 and the voltage applied to the electron emission unit 115A through the cathode electrode 111.
[44] Hereinafter, a method of manufacturing the spin type field emission device will be described with reference to FIGS. 34A, 34B and 35A, 35B which are schematic partial cross-sectional views of the supporting member 110 constituting the cathode panel and the like.
[45] Basically, the spin type field emission device can be obtained by a method in which each electron emission unit 115A is formed by vertical deposition of a metal material. That is, the deposition particles enter perpendicularly to the first opening 114A formed through the gate electrode 113. However, the amount of deposited particles reaching the bottom of the second opening 114B gradually decreases due to the shielding effect caused by the overhang deposit formed near the opening end of the first opening 114A, and the electron-emitting portion which is a conical deposit ( 115A) is formed in a self-aligning manner. In order to facilitate the removal of unnecessary overhang deposits in the manufacturing method of the spin type field emission device, a method of forming the release layer 116 on the gate electrode 113 and the insulating layer 112 in advance will be described. 34A, 34B and 35A, 35B show one electron emission section.
[46] [Step-10]
[47] First, a conductive material layer for a cathode electrode made of, for example, polysilicon is formed by a plasma CVD method on a support member 110 made of, for example, a glass substrate, and then a conductive material for the cathode electrode by lithography and dry etching techniques. The layer is patterned to form a stripe cathode electrode 111. Thereafter, an insulating layer 112 made of SiO ₂ is formed on the entire surface by the CVD method.
[48] [Process-20]
[49] Next, a conductive material layer for the gate electrode (for example, a TiN layer) is formed on the insulating layer 112 by sputtering, and then the conductive material layer for the gate electrode is patterned by lithography and dry etching techniques. As a result, the stripe gate electrode 113 can be obtained. The stripe cathode electrode 111 extends in the left and right directions of the drawing, and the stripe gate electrode 113 extends in the vertical direction of the drawing.
[50] [Process-30]
[51] Thereafter, a resist layer is formed again, one opening 114A is formed through the gate electrode 113 by etching, and then a second opening 114B is formed in the insulating layer 112 by etching. . The cathode electrode 111 is exposed to the bottom of the second opening 114B, and the resist layer is removed. In this manner, the structure shown in Fig. 34A can be obtained.
[52] [Process-40]
[53] Next, while the supporting member 110 is rotated, nickel (Ni) is inclined and deposited on the insulating layer 112 and the gate electrode 113 to form a release layer 116 (see Fig. 34B). In this case, it is determined that the incidence angle of the deposited particles is sufficiently large with respect to the normal of the normal supporting member 110 (for example, incidence angle of 65 degrees to 85 degrees), so that almost nickel is formed at the bottom of the second opening 114B. Without depositing, the release layer 116 may be formed on the gate electrode 113 and the insulating layer 112. The release layer 116 extends like an eave from the open end of the first opening 114A, and the diameter of the first opening 114A is substantially reduced due to the release layer 116.
[54] [Process-50]
[55] Next, a conductive material such as molybdenum (Mo) is deposited vertically on the entire surface (incidence angle 3 degrees to 10 degrees). In this case, as shown in FIG. 35A, the substantial diameter of the first opening 114A decreases with the growth of the conductive material layer 117 having the overhang on the release layer 116, so that the second opening 114B The deposited particles contributing to the deposition at the bottom are gradually limited to the deposited particles passing near the center of the first opening 114A. As a result, conical deposits are formed at the bottom of the second opening 114B, and the conical deposits constitute the electron-emitting portions 115A.
[56] [Process-60]
[57] Then, the release layer 116 is removed from the surfaces of the gate electrode 113 and the insulating layer 112 by a lift-off method, and the conductive material on the gate electrode 113 and the insulating layer 112 is removed. The layer 117 is selectively removed. In this way, a cathode panel CP having a plurality of spin type field emission devices can be obtained.
[58] In the display device, in order to obtain a large emission electron current at a low driving voltage, it is effective to sharpen the tip of the electron emission section. From this point of view, it can be said that the electron-emitting part 115A of the above-described spin type field emission device has excellent performance. The manufacturing method of the spin type field emission device is an excellent method that can form conical deposits as the electron emission portions 115A in the openings 114A and 114B. However, the formation of the conical electron emitting portions 115A requires advanced processing techniques, and as the size of the display device increases and the area of the effective regions increases, sometimes tens of millions of electron emitting portions 115A are spread over the effective region. It is difficult to form uniformly over. In addition, many semiconductor device manufacturing apparatuses are used, and if the display apparatus is enlarged, an increase in the manufacturing apparatus of the semiconductor device is required, causing an increase in the manufacturing cost of the display apparatus.
[59] So-called planar field emission devices have been proposed that use a planar electron emission unit exposed to the bottom of the opening without using a conical electron emission unit. In the planar field emission device, each electron emission unit is provided on a cathode electrode located at the bottom of the opening, and has a lower work function than the material of the cathode electrode so as to achieve a high emission electron current even in a planar shape. Consists of matter. In recent years, various carbon-based materials including carbon nanotubes have been proposed as such materials.
[60] In the fabrication of such a planar field emission device, after obtaining the structure shown in Fig. 34A, a negative photosensitive paste layer 118 containing carbon nanotubes is formed on the entire surface including the inside of the opening 114, for example. Formed (see Figure 36A). Then, the photosensitive paste layer 118 is exposed (see FIG. 36B), developed, and after removing the photosensitive paste layer 118 in the unnecessary area, the photosensitive paste layer 118 is fired, thereby causing the electron emitting portion 115 to be exposed. ) Can be obtained (see FIG. 36C). Reference numeral 119 denotes a mask for exposure.
[61] When exposing the photosensitive paste layer 118, the exposure mask 119 is positioned with respect to a pre-installed reference marker (not shown) so that a positional shift is not generated between the exposure mask 119 and the opening 114.
[62] However, for example, due to the thermal history of the support member 110 or the stress of various layers (cathode electrode 111, insulating layer 112, gate electrode 113, etc.) formed on the support member 110, and the like. Thus, deformation occurs in the support member 110. As a result, when the photosensitive paste layer 118 is exposed, position shift frequently occurs between the exposure mask 119 and the opening 114. When such a phenomenon occurs, the distance from the open end of the first opening 114A made through the gate electrode 113 to the electron emitting section 115 located at the bottom of the second opening 114B changes, As a result, the amount of electron emission from the electron emission unit 115 changes, resulting in non-uniform display. In the worst case, the photosensitive paste layer 118 remains on the sidewall of the opening 114, and forms a short circuit between the gate electrode 113 and the cathode electrode 111.
[63] Accordingly, it is an object of the present invention to provide a method for fabricating a cold cathode field emission device which makes it possible to form an electron-emitting portion at the bottom of an opening formed in a gate electrode and an insulating layer in a self-aligning manner with respect to the opening, and a cold cathode electric field to which the method is applied A manufacturing method of an emission display device, and a cold cathode field emission device and a cold cathode field emission display device obtained by the manufacturing method are provided.
[1] 1 is a schematic partial cross-sectional view of a cold cathode field emission display device having a cold cathode field emission device according to Embodiment 1 of the present invention.
[2] 2A to 2C are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the first embodiment of the present invention.
[3] 3A and 3B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to Embodiment 1 of the present invention.
[4] 4 (A) and 4 (B) are schematic partial cross-sectional views of a supporting member and the like for explaining the method of manufacturing the cold cathode field emission device of Embodiment 1 of the present invention, continuing from FIG. 3 (C).
[5] 5A and 5B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing the cold cathode field emission device according to the second embodiment of the present invention.
[6] 6A and 6B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to the second embodiment of the present invention.
[7] FIG. 7 is a schematic partial cross-sectional view of a supporting member or the like for explaining the method of manufacturing the cold cathode field emission device according to Embodiment 2 of FIG. 6 (B).
[8] 8A and 8B are schematic partial cross-sectional views of a support member and the like for explaining a method of manufacturing the cold cathode field emission device according to the third embodiment of the present invention.
[9] 9A and 9B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to Embodiment 3 of the present invention.
[10] 10A and 10B are schematic partial cross-sectional views of a support member and the like for explaining a method of manufacturing the cold cathode field emission device according to the fourth embodiment of the present invention.
[11] 11A and 11B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to the fourth embodiment of the present invention.
[12] 12A and 12B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to the fourth embodiment of the present invention.
[13] 13A and 13B are schematic partial cross-sectional views of a supporting member and the like for explaining the method for manufacturing the cold cathode field emission device according to the fourth embodiment of the present invention.
[14] FIG. 14 is a schematic partial cross-sectional view of a supporting member or the like for explaining the method for manufacturing the cold cathode field emission device of Embodiment 4 of the invention, following FIG. 13 (B);
[15] 15A and 15B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing the cold cathode field emission device according to the fifth embodiment of the present invention.
[16] FIG. 16 is a schematic partial cross-sectional view of a supporting member or the like for explaining the method of manufacturing the cold cathode field emission device according to Embodiment 5 of the invention (B).
[17] 17A to 17C are schematic partial cross-sectional views of a support member and the like for explaining the manufacturing method of the cold cathode field emission device according to the seventh embodiment of the present invention.
[18] 18A and 18B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to the seventh embodiment of the present invention.
[19] 19A and 19B are schematic partial cross-sectional views of a support member and the like for explaining the method of manufacturing the cold cathode field emission device according to the seventh embodiment of the present invention.
[20] 20A and 20B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing the cold cathode field emission device according to the eighth embodiment of the present invention.
[21] 21A and 21B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment of the present invention.
[22] FIG. 22 is a schematic partial cross-sectional view of a supporting member or the like for explaining the method for manufacturing the cold cathode field emission device according to Embodiment 8 of the present invention, following FIG. 21 (B).
[23] 23A and 23B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment of the present invention.
[24] 24A and 24B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the ninth embodiment of the present invention.
[25] 25A and 25B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the tenth embodiment of the present invention.
[26] 26A and 26B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to Embodiment 10 of the present invention.
[27] 27A and 27B are schematic partial cross-sectional views of a support member and the like for explaining the method for manufacturing the cold cathode field emission device according to the tenth embodiment of the present invention.
[28] 28A and 28B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing a cold cathode field emission device according to Embodiment 10 of the present invention.
[29] FIG. 29 is a schematic partial cross-sectional view of a support member or the like for explaining the method for manufacturing the cold cathode field emission device according to Embodiment 10 of the present invention (FIG. 28B).
[30] 30A and 30B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing the cold cathode field emission device according to the eleventh embodiment of the invention.
[31] FIG. 31 is a schematic partial cross-sectional view of a support member or the like for explaining the method for manufacturing the cold cathode field emission device according to Embodiment 11 of the present invention, following FIG. 30 (B).
[32] 32 is a schematic partial cross-sectional view of a conventional cold cathode field emission display having a spin type cold cathode field emission device.
[33] 33 is a schematic exploded perspective view of the cathode panel and the anode panel of the cold cathode field emission display when the cathode panel and the anode panel are disassembled.
[34] 34A and 34B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing a spin type cold cathode field emission device.
[35] 34A and 34B are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing a spin type cold cathode field emission element, continuing from FIG. 34B.
[36] 36A to 36C are schematic partial cross-sectional views of a support member and the like for explaining a method for manufacturing a planar cold cathode field emission device.
[64] Method for manufacturing a cold cathode field emission device according to the first aspect of the present invention for achieving the above object
[65] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light and extending in the first direction;
[66] (B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
[67] (C) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
[68] (D) As an exposure mask, exposure light is irradiated from the back side of the supporting member through the hole to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to develop the insulating layer and the gate over the part. Removing the electrode to form an opening having a diameter larger than the diameter of the hole through the insulating layer on the hole and the gate electrode, and exposing a portion of the cathode electrode to the bottom of the opening;
[69] (E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
[70] (F) The exposure mask is irradiated with exposure light from the back side of the supporting member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed to develop the electron-emitting portion on the cathode electrode and in the hole. It includes a step of forming an electron emitting portion composed of a forming layer.
[71] In order to achieve the above object, a method of manufacturing a cold cathode field emission display device includes a substrate having an anode electrode and a phosphor layer, a support member having a cold cathode field emission element, and a phosphor layer and a cold cathode field emission element. Arranged so as to face each other, and the substrate and the support member are joined at the peripheral portion.
[72] It comprises manufacturing a cold cathode field emission element based on (A)-(F) of the manufacturing method of the cold cathode field emission element which concerns on 1st aspect of this invention.
[73] In addition, in the following description, each process may be abbreviated as follows.
[74] "On the surface (first surface) of the support member for transmitting exposure light, having a hole exposed at the bottom, and forming a cathode electrode made of a material which does not transmit exposure light and extending in the first direction; The process "may be abbreviated as" cathode electrode forming process ".
[75] "Process of forming the insulating layer which consists of the photosensitive material which permeate | transmits exposure light on the whole surface" may be abbreviated as "process of forming the insulating layer which consists of the photosensitive material which permeates exposure light."
[76] "Step of forming a gate electrode made of a photosensitive material and extending in a second direction different from the first direction" may be abbreviated as "step of forming a gate electrode made of a photosensitive material".
[77] "As an exposure mask, exposure light is irradiated from the back side of the support member through the hole to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to apply the insulating layer and the gate electrode to the portion above the hole. By removing, a step of forming an opening having a diameter larger than the diameter of the hole through the insulating layer on the hole and the gate electrode, and exposing a portion of the cathode electrode at the bottom of the opening " To form an opening and to expose the cathode electrode in some cases.
[78] "Step of forming the electron emission part formation layer comprised of the photosensitive material" at least in an opening part may be abbreviated as "process of forming the electron emission part formation layer comprised of the photosensitive material."
[79] "The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, and the electron-emitting part formation layer on the hole is exposed, and then the electron-emitting part formation layer is developed to the electron-emitting part formation layer on the cathode electrode and in the hole. The process of forming the configured electron emitting portion may be abbreviated as "the process of forming the electron emitting portion on the cathode electrode by exposure and development".
[80] Method for manufacturing a cold cathode field emission device or a cold cathode field emission display device according to the aspect 1A of the present invention, or a cold cathode field emission element or cold cathode according to any one of forms 1B to 1D described later A method of fabricating a field emission display device, a method of fabricating a cold cathode field emission device or a cold cathode field emission display device according to any one of 3A to 3D described below, which is supported through a gate electrode and an insulating layer. An opening is formed by the back exposure method in which the back (second surface) of the member is exposed.
[81] In the method for manufacturing a cold cathode field emission device or a cold cathode field emission display device according to the second aspect A, the second B aspect, the fourth A aspect, or the fourth aspect, described later, the substrate is supported through a gate electrode and an insulating layer. An opening is formed by the surface exposure method in which the surface (first surface) of the member is exposed.
[82] The manufacturing method of the cold cathode field emission device or the cold cathode field emission display device in any one of the form of 3A-3D, the form of 4A, or the form of 4B is a form of form 1A-1D, The manufacturing method of a cold cathode field emission element or a cold cathode field emission display device in any one of the form of 2A or 2B differs in that a light transmission layer is formed and a field emission part is formed on a light transmission layer.
[83] Method for manufacturing a cold cathode field emission device according to the first aspect of the present invention for achieving the above object
[84] (A) "step of forming a cathode electrode",
[85] (B) "step of forming an insulating layer composed of a photosensitive material that transmits exposure light";
[86] (C) "step of forming a gate electrode composed of a photosensitive material";
[87] (D) "Step of forming opening by exposure from back side of support member and exposing cathode electrode"
[88] (E) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits light at least in the opening;
[89] (F) forming an etching mask layer made of a resist material on the entire surface;
[90] (G) An electron-emitting part which irradiates exposure light from the back side of a support member as said exposure mask from the back side, exposes an etching mask layer to the part on a hole, develops an etching mask layer, and is located in the bottom part of an opening part. Leaving an etching mask layer on the formation layer;
[91] (H) etching the electron-emitting portion formation layer using the etching mask layer, and then removing the etching mask layer to form an electron-emitting portion composed of the electron-emitting portion formation layer in the cathode electrode and the hole.
[92] The manufacturing method of the cold cathode field emission display device which concerns on the form of 1B of this invention is based on (A)-(H) of the manufacturing method of the cold cathode field emission element which concerns on the form of 1B of this invention. Manufacturing an emitting device.
[93] "Step of forming an electron emission part formation layer comprised of the non-photosensitive material which permeate | transmits light in an opening part" may be abbreviated as "process of forming the electron emission part formation layer comprised of a nonphotosensitive material."
[94] In addition, "the process of forming the etching mask layer which consists of a resist material in the whole surface" may be abbreviated as "the process of forming an etching mask layer."
[95] Further, "the exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, the etching mask layer is exposed to the portion above the hole, the etching mask layer is developed, and the electron emitting portion located at the bottom of the opening. "Process of leaving an etching mask layer on the formation layer" may be abbreviated as "process of exposing and developing an etching mask layer."
[96] "The process of etching the electron emission part formation layer using an etching mask layer, and then removing an etching mask layer and forming the electron emission part which consists of an electron emission part formation layer in a cathode and a hole" is "on a cathode electrode based on etching." May be abbreviated as "process of forming an electron emitting part in the "
[97] Method for manufacturing a cold cathode field emission device according to the first aspect of the present invention for achieving the above object
[98] (A) "step of forming a cathode electrode",
[99] (B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
[100] (C) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
[101] (D) forming an etching mask layer made of a resist material on the gate electrode and the insulating layer,
[102] (E) After exposing the etching mask layer by exposing the exposure light from the back side of the supporting member through the hole as the exposure mask, the etching mask layer is developed to form a mask layer opening in the portion of the etching mask layer above the hole. Process to do,
[103] (F) After etching the gate electrode and the insulating layer under the mask layer opening using the etching mask layer, the opening layer having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole by removing the etching mask layer. Forming a portion and exposing a portion of the cathode electrode at the bottom of the opening;
[104] (G) "step of forming an electron-emitting part formation layer composed of a photosensitive material",
[105] (H) "a step of forming an electron emitting portion on the cathode electrode by exposure and development.
[106] The manufacturing method of the cold cathode field emission display device which concerns on the form of 1C of this invention is based on (A)-(H) of the manufacturing method of the cold cathode field emission element which concerns on form 1C of this invention. Manufacturing an emitting device.
[107] "Process of forming the insulating layer which consists of the photosensitive material which permeate | transmits exposure light on the whole surface" may be abbreviated as "process of forming the insulating layer which consists of the photosensitive material which permeates exposure light."
[108] "Step of forming a gate electrode composed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction" "Step of forming a gate electrode composed of the non-photosensitive material" It may be abbreviated as.
[109] In addition, "the process of forming the etching mask layer which consists of a resist material on a gate electrode and an insulating layer" may be abbreviated as "the process of forming an etching mask layer on a gate electrode and an insulating layer."
[110] In addition, after exposing the etching mask layer by exposing the exposure light from the back (second surface) side of the supporting member through the hole as the exposure mask, the etching mask layer is developed to the portion of the etching mask layer on the hole. "Process of forming a mask layer opening" may be abbreviated as "process of forming a mask layer opening through an etching mask layer."
[111] Method for manufacturing a cold cathode field emission device according to the first aspect of the present invention for achieving the above object
[112] (A) "step of forming a cathode electrode",
[113] (B) "process of forming an insulating layer composed of a non-photosensitive material that transmits exposure light"
[114] (C) "step of forming a gate electrode composed of a non-photosensitive material",
[115] (D) forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer,
[116] (E) After exposing the first etching mask layer by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the first etching mask layer is developed to form a portion of the first etching mask layer on the hole. Forming a mask layer opening in the
[117] (F) After etching the gate electrode and the insulating layer under the mask layer opening by using the first etching mask layer, the first etching mask layer is removed so that the insulating layer on the hole and the gate electrode are larger than the diameter of the hole. Forming an opening having a diameter and exposing a portion of the cathode electrode to the bottom of the opening;
[118] (G) "step of forming an electron emitting portion forming layer composed of a non-photosensitive material",
[119] (H) forming a second etching mask layer made of a resist material on the entire surface;
[120] (I) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole, the second etching mask layer on the hole is exposed, and the second etching mask layer is developed to be located at the bottom of the opening. Leaving a second etching mask layer on the electron-emitting part forming layer;
[121] (J) etching the electron emitting portion forming layer using the second etching mask layer, and then removing the second etching mask layer to form an electron emitting portion composed of the electron emitting portion forming layer in the cathode electrode and the hole. .
[122] The manufacturing method of the cold cathode field emission display device which concerns on the 1D form of this invention is based on (A)-(J) of the manufacturing method of the cold cathode field emission element which concerns on 1D form of this invention. Manufacturing an emitting device.
[123] "Step of forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer" is sometimes abbreviated as "Step of forming a first etching mask layer on the gate electrode and the insulating layer".
[124] In addition, after exposing the first etching mask layer by exposing the exposure light from the back (second surface) side of the supporting member through the hole as the exposure mask, the first etching mask layer is developed to develop the first on the hole. "Process of forming a mask layer opening in a part of an etching mask layer" may be abbreviated as "process of forming a mask layer opening through a 1st etching mask layer."
[125] In addition, "the process of forming the 2nd etching mask layer which consists of a resist material in the whole surface" may be abbreviated as "the process of forming a 2nd etching mask layer."
[126] "The exposure part is irradiated with the exposure light from the back surface (second surface) side of a support member as said exposure mask, the 2nd etching mask layer on a hole is exposed, and the bottom part of an opening part is developed by developing a 2nd etching mask layer. The process of leaving the second etching mask layer on the electron-emitting part forming layer located at " " may be abbreviated as "the process of exposing and developing the second etching mask layer".
[127] According to a second aspect of the present invention, there is provided a method for manufacturing a cold cathode field emission device, comprising: (A) a step of forming a cathode electrode;
[128] (B) forming an insulating layer made of a photosensitive material on the entire surface;
[129] (C) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
[130] (D) After the exposure light is irradiated to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form an opening having a diameter larger than the diameter of the hole in the gate electrode and the insulating layer on the hole. Exposing a portion of the cathode electrode to the bottom of the opening;
[131] (E) "step of forming an electron emitting portion forming layer composed of a photosensitive material",
[132] (F) "the process of forming an electron emission part on a cathode electrode by exposure and image development".
[133] The manufacturing method of the cold cathode field emission display device which concerns on the 2 A aspect of this invention is based on (A)-(F) of the manufacturing method of the cold cathode field emission element which concerns on 2 A aspect of this invention. Manufacturing an emitting device.
[134] "Step of forming an insulating layer composed of a photosensitive material on the entire surface" is sometimes abbreviated as "step of forming an insulating layer composed of a photosensitive material".
[135] "Step of forming a gate electrode formed of a photosensitive material which transmits exposure light on an insulating layer and extending in a second direction different from the first direction" "Forms a gate electrode composed of a photosensitive material which transmits exposure light May be abbreviated as "step to be processed".
[136] In addition, after the exposure light is irradiated to the gate electrode and the insulating layer from the surface (first surface) side of the supporting member, the gate electrode and the insulating layer are developed to develop a diameter larger than the diameter of the hole on the gate electrode and the insulating layer. The process of forming an opening having an opening and exposing a part of the cathode electrode at the bottom of the opening may be abbreviated as "the process of forming the opening by exposure from the surface side".
[137] Method for manufacturing a cold cathode field emission device according to the second aspect of the present invention for achieving the above object
[138] (A) "step of forming a cathode electrode",
[139] (B) "step of forming an insulating layer composed of a photosensitive material";
[140] (C) "step of forming a gate electrode composed of a photosensitive material that transmits exposure light", and
[141] (D) "step of forming an opening by exposure from the surface side",
[142] (E) "step of forming an electron emitting portion forming layer composed of a photosensitive material",
[143] (F) "step of forming an etching mask layer",
[144] (G) "process of exposing and developing an etching mask layer",
[145] (H) "process of forming an electron emission part on a cathode electrode based on etching".
[146] The manufacturing method of the cold cathode field emission display device which concerns on the 2nd aspect of this invention is based on (A)-(H) of the manufacturing method of the cold cathode field emission element which concerns on 2nd aspect of this invention. Manufacturing an emitting device.
[147] Method for manufacturing a cold cathode field emission device according to the third aspect of the present invention for achieving the above object
[148] (A) "step of forming a cathode electrode",
[149] (B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
[150] (C) "step of forming an insulating layer composed of a photosensitive material that transmits exposure light";
[151] (D) "step of forming a gate electrode composed of a photosensitive material",
[152] (E) After exposing the insulating layer and the gate electrode over the hole by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the insulating layer and the gate electrode are developed to develop the insulating layer over the hole and Removing the gate electrode to form an opening in the insulating layer on the hole and the gate electrode, and exposing the light transmitting layer to the bottom of the opening;
[153] (F) "the process of forming the electron emission part formation layer which consists of a photosensitive material",
[154] (G) The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed, and the electron-emitting layer is formed on the light transmitting layer. It includes a step of forming an electron emitting portion composed of an auxiliary forming layer.
[155] The manufacturing method of the cold cathode field emission display device which concerns on 3rd aspect of this invention is based on (A)-(G) of the manufacturing method of the cold cathode field emission element which concerns on 3rd aspect of this invention. Manufacturing an emitting device.
[156] "Step of forming a light transmitting layer composed of a conductive material or a resistor material that transmits exposure light at least in a hole" may be abbreviated as "step of forming a light transmitting layer".
[157] "As an exposure mask, through the said hole, exposure light was irradiated from the back (second surface) side of a support member to expose the insulating layer and gate electrode on a hole, and the insulating layer and gate electrode were developed, and Removing the insulating layer and the gate electrode to form an opening in the insulating layer and the gate electrode over the hole, and exposing the light transmitting layer to the bottom of the opening " " expose exposure light from the back side to form the opening, May be abbreviated as "process of exposing a light transmitting layer".
[158] In addition, after the exposure light is irradiated from the back (second surface) side of the supporting member through the hole as the exposure mask, the electron emitting part forming layer on the hole is exposed, the electron emitting part forming layer is developed, and the light transmission is performed. The process of forming an electron emitting portion composed of the electron emitting portion forming layer on the layer may be abbreviated as "the process of forming an electron emitting portion on the light transmitting layer by exposure and development".
[159] Method for manufacturing a cold cathode field emission device according to the third aspect of the present invention for achieving the above object
[160] (A) "step of forming a cathode electrode",
[161] (B) "process of forming a light transmitting layer",
[162] (C) "step of forming an insulating layer composed of a photosensitive material that transmits exposure light";
[163] (D) "step of forming a gate electrode composed of a photosensitive material",
[164] (E) "the process of forming an opening part by exposure from a back side and exposing a light transmitting layer",
[165] (F) "step of forming an electron emitting portion forming layer made of a non-photosensitive material",
[166] (G) "step of forming an etching mask layer",
[167] (H) "process of exposing and developing etching mask layer",
[168] (I) After etching the electron emission part formation layer using an etching mask layer, the process of removing an etching mask layer and forming the electron emission part comprised by an electron emission part formation layer on a light transmission layer is included.
[169] The manufacturing method of the cold cathode field emission display device which concerns on 3rd aspect of this invention is based on (A)-(I) of the manufacturing method of the cold cathode field emission element which concerns on 3rd aspect of this invention. Manufacturing an emitting device.
[170] "The process of etching an electron emission part formation layer using an etching mask layer, removing an etching mask layer, and forming the electron emission part which consists of an electron emission part formation layer on a light transmission layer" is a light transmission based on etching. "The process of forming an electron emission part on a layer" may be abbreviated as ".
[171] Method for manufacturing a cold cathode field emission device according to the third aspect of the present invention for achieving the above object
[172] (A) "step of forming a cathode electrode",
[173] (B) "process of forming a light transmitting layer",
[174] (C) "step of forming an insulating layer composed of a non-photosensitive material";
[175] (D) "step of forming a gate electrode composed of a non-photosensitive material";
[176] (E) "step of forming etching mask layer on gate electrode and insulating layer",
[177] (F) "step of forming mask layer opening through etching mask layer",
[178] (G) After etching the gate electrode and the insulating layer below the mask layer opening using the etching mask layer, the etching mask layer is removed to form an opening through the insulating layer and the gate electrode over the hole, Exposing the light transmitting layer to the bottom;
[179] (H) "step of forming an electron-emitting part formation layer composed of a photosensitive material";
[180] (I) "the process of forming an electron emission part formation layer on a light transmission layer by exposure and image development".
[181] The manufacturing method of the cold cathode field emission display device which concerns on 3rd aspect of this invention is based on (A)-(I) of the manufacturing method of the cold cathode field emission element which concerns on 3rd aspect of this invention. Manufacturing an emitting device.
[182] Method for manufacturing a cold cathode field emission device according to the third aspect of the present invention for achieving the above object
[183] (A) "step of forming a cathode electrode",
[184] (B) "process of forming a light transmitting layer",
[185] (C) "step of forming an insulating layer composed of a non-photosensitive material that transmits exposure light", and
[186] (D) "step of forming a gate electrode composed of a non-photosensitive material";
[187] (E) "step of forming a first etching mask layer on the gate electrode and the insulating layer",
[188] (F) "step of forming a mask layer opening through the first etching mask layer",
[189] (G) After etching the gate electrode and the insulating layer under the mask layer opening using the first etching mask layer, the openings are formed in the insulating layer and the gate electrode over the hole by removing the first etching mask layer. Exposing the light transmitting layer to the bottom of the opening;
[190] (H) "step of forming an electron emitting portion forming layer composed of a non-photosensitive material",
[191] (I) "step of forming a second etching mask layer",
[192] (J) "process of exposing and developing a second etching mask layer",
[193] (K) After etching the electron emitting portion forming layer using the second etching mask layer, the second etching mask layer was removed, and the electron emitting portion composed of the electron emitting portion forming layer composed of the electron emitting portion forming layer on the light transmitting layer. Forming process.
[194] The manufacturing method of the cold cathode field emission display device which concerns on the 3D form of this invention is based on (A)-(K) of the manufacturing method of the cold cathode field emission element which concerns on 3D form of this invention. Manufacturing an emitting device.
[195] Method for manufacturing a cold cathode field emission device according to the fourth aspect of the present invention for achieving the above object
[196] (A) "step of forming a cathode electrode",
[197] (B) "process of forming a light transmitting layer",
[198] (C) "step of forming an insulating layer composed of a photosensitive material";
[199] (D) "step of forming a gate electrode composed of a photosensitive material that transmits exposure light", and
[200] (E) After exposing the gate electrode and the insulating layer to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form openings in the gate electrode and the insulating layer over the holes, and light transmission at the bottom of the opening. Exposing the layer,
[201] (F) "the process of forming the electron emission part formation layer which consists of a photosensitive material",
[202] (G) "the process of forming an electron emission part on a light transmission layer by exposure and image development".
[203] The manufacturing method of the cold cathode field emission display device which concerns on 4th aspect of this invention is based on (A)-(G) of the manufacturing method of the cold cathode field emission element which concerns on 4th aspect of this invention. Manufacturing an emitting device.
[204] "After the exposure light is irradiated to the gate electrode and the insulating layer from the surface (first surface) side of the supporting member, the gate electrode and the insulating layer are developed to form an opening in the gate electrode and the insulating layer over the hole, and the bottom of the opening. May be abbreviated as "step of exposing the light transmitting layer to the bottom of the opening".
[205] Method for manufacturing a cold cathode field emission device according to the fourth aspect of the present invention for achieving the above object
[206] (A) "step of forming a cathode electrode",
[207] (B) "process of forming a light transmitting layer",
[208] (C) "step of forming an insulating layer composed of a photosensitive material";
[209] (D) "step of forming a gate electrode composed of a photosensitive material that transmits exposure light", and
[210] (E) "process of exposing the light transmitting layer to the bottom of the opening"
[211] (F) "step of forming an electron emitting portion forming layer made of a non-photosensitive material",
[212] (G) "step of forming an etching mask layer",
[213] (H) "process of exposing and developing etching mask layer",
[214] (I) "the process of forming an electron emission part on a light transmitting layer based on etching".
[215] The manufacturing method of the cold cathode field emission display device which concerns on 4th aspect of this invention is based on (A)-(I) of the manufacturing method of the cold cathode field emission element which concerns on 4th aspect of this invention. Manufacturing an emitting device.
[216] The cold cathode field emission device according to the first aspect of the present invention for achieving the above object
[217] (a) a cathode electrode provided on the support member and extending in the first direction,
[218] (b) an insulating layer formed on the support member and the cathode electrode,
[219] (c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
[220] (d) an opening formed in the via electrode and the insulating layer,
[221] (e) including an electron emitting unit,
[222] Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
[223] In the portion of the cathode electrode located at the bottom of the opening, a hole reaching the support member is provided,
[224] Electron-emitting portions are formed in portions of the cathode electrode and holes located at the bottom of the opening.
[225] A cold cathode field emission device according to a second aspect of the present invention for achieving the above object is
[226] (a) a cathode electrode provided on the support member and extending in the first direction,
[227] (b) an insulating layer formed on the support member and the cathode electrode,
[228] (c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
[229] (d) an opening formed in the via electrode and the insulating layer,
[230] (e) including an electron emitting unit,
[231] Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
[232] The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
[233] At least the light transmitting layer is formed in the hole,
[234] The electron emission portion is formed on the light transmitting layer located at the bottom of the opening.
[235] The cold cathode field emission display device according to the first aspect of the present invention for achieving the above object is
[236] A substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element are arranged so that the phosphor layer and the cold cathode field emission element face each other, and the substrate and the support member are joined at the periphery,
[237] The cold cathode field emission device
[238] (a) a cathode electrode provided on the support member and extending in the first direction,
[239] (b) an insulating layer formed on the support member and the cathode electrode,
[240] (c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
[241] (d) an opening formed through the gate electrode and the insulating layer,
[242] (e) including an electron emitting unit,
[243] Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
[244] The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
[245] The electron emission portion is formed in the portion and the hole of the cathode electrode located at the bottom of the opening.
[246] A cold cathode field emission display device according to a second aspect of the present invention for achieving the above object is
[247] A substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element are arranged so that the phosphor layer and the cold cathode field emission element face each other, and the substrate and the support member are joined at the periphery,
[248] The cold cathode field emission device
[249] (a) a cathode electrode provided on the support member and extending in the first direction,
[250] (b) an insulating layer formed on the support member and the cathode electrode,
[251] (c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
[252] (d) an opening formed through the gate electrode and the insulating layer,
[253] (e) including an electron emitting unit,
[254] Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
[255] The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
[256] At least the light transmitting layer is formed in the hole,
[257] The electron emission portion is formed on the light transmitting layer located at the bottom of the opening.
[258] Method for manufacturing a cold cathode field emission device according to the first aspect A to the first form D, the second form A, the second form B, the third form A to the third form 3D, the fourth form A, or the fourth form B of the present invention, or the cold cathode field emission display In the method for manufacturing the device or the cold cathode field emission device or the cold cathode field emission display device according to the first and second aspects of the present invention (hereinafter, these may be collectively referred to simply as the present invention), The support member may be preferably selected from a glass substrate, a glass substrate having an insulating film formed on its surface, a quartz substrate, a quartz substrate having an insulating film formed on its surface, and a semiconductor substrate having an insulating film formed on its surface. It is preferable to use a glass substrate or the glass substrate in which the insulating film was formed in the surface from a viewpoint of reducing manufacturing cost. Glass substrates include high distortion glass, soda glass (Na ₂ O, CaO, SiO ₂ ), borosilicate glass (Na ₂ O, Ba ₂ O ₃ , SiO ₂ ), and forsterite (2 MgO, SiO ₂ ) and lead glass (Na ₂ O.PbO.SiO ₂ ). The substrate constituting the anode panel can be configured in the same manner as the support member.
[259] The light source for exposure in the present invention is preferably an ultraviolet light source, and specific examples thereof include a low pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a halogen lamp, an ArF esmermer laser, and a KrF excimer laser.
[260] The materials constituting the cathode include silver paste and various conductive pastes such as copper paste, tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium (Cr), and aluminum. Metals such as (Al), copper (Cu), gold (Au), silver (Ag), nickel (Ni), iron (Fe), zirconium (Zr); Alloys or compounds containing these metal elements (for example, nitrides such as TiN and silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ and TaSi ₂ ).
[261] The photosensitive material constituting the gate electrode includes silver paste, nickel paste, and gold paste. In addition, the non-photosensitive material used as the gate electrode and transmitting the exposure light includes ITO, stone oxide, zinc oxide and titanium oxide. In addition, the photosensitive material used as the gate electrode and transmitting the exposure light includes silver paste, nickel paste, and gold paste. In addition, silver paste, nickel paste, and gold paste transmit the exposure light in an exposure process (that is, before firing).
[262] It is preferable that the cathode electrode and the gate electrode have a stripe shape. From the viewpoint of simplifying the configuration of the cold cathode field emission display device, preferably, the dead image of the stripe cathode electrode extending in the first direction and the dead image of the stripe gate electrode extending in the second direction are perpendicular to each other. To cross.
[263] The method of forming the cathode electrode or the gate electrode includes, for example, a deposition method such as an electron beam deposition method or a filament deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, a plating method, a lift-off method, and the like. It is most preferable to use the screen printing method from the viewpoint of reduction of production cost. When the screen printing method or the plating method is used, for example, a cathode or gate electrode having a stripe shape can be directly formed.
[264] The conductive material constituting the light transmitting layer includes, for example, indium stone oxide (ITO) and stone oxide (SnO ₂ ). In addition, the resistance value of the conductive material is preferably 1 x 10 ^-2 Ω or less. As the resistor material constituting the light transmitting layer, amorphous silicon, silicon carbide (SiC), SiCN, SiN, ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride may be exemplified. Further, the resistance value of the resistor material may already be 1 x 10 ⁵ Ω to 1 x 10 ⁷ Ω, preferably several MΩ. Although the sputtering method, the CVD method, or the screen printing method can be used as the method of forming the light transmitting layer, it is preferable to adopt the screen printing method from the viewpoint of reducing the production cost. The light transmitting layer may be formed at least in the hole, may be formed from the hole on the cathode electrode in the vicinity of the hole, may be formed on the entire cathode electrode, and unless a short circuit occurs between adjacent cathode electrodes, It may be formed on the support member beyond the cathode electrode. Depending on the formation form of the light transmitting layer, the light transmitting layer and the cathode electrode may be exposed at the bottom of the opening. In the case where it is difficult to reduce the resistance of the conductive material constituting the light transmitting layer, a bus line (bus electrode) may be formed of a material such as silver paste so as to contact the transverse side of the light transmitting layer.
[265] The insulating layer composed of a photosensitive material that transmits the exposure light has a function as an insulating layer, a so-called positive resin (a resin having a characteristic of being dissolved in the form liquid and being removed at the time of development by removal of exposure light). It may be composed of a substance. On the other hand, the insulating layer made of the photosensitive material may be made of a so-called positive resin and a material having a function as an insulating layer, and may be made of a so-called negative resin (polymerized or crosslinked by irradiation with exposure light and insoluble in a developer). Or a resin which becomes poorly soluble and has properties remaining after development) and a material having a function as an insulating layer. The insulating layer made of a non-photosensitive material that transmits exposure light may be made of a material that transmits exposure light and has a function as an insulating layer. Examples of the material having a function as the insulating layer include SiO ₂ small materials, color spaces, polyimide resins, SiN, SiON, CF ₄ , and SiOFx. As a method for forming the insulating layer, known processes such as CVD method, coating method, sputtering method and screen printing method can be used, but screen printing method is preferably adopted from the viewpoint of reducing production cost.
[266] The electron-emitting part forming layer is formed as an electron-emitting part over the hole from the cathode electrode or on the light transmitting layer, and then the material constituting the electron-emitting part forming layer is fired or cured depending on the material constituting the electron-emitting part forming layer. It may be necessary. The upper limit of the firing or curing temperature may be a temperature at which thermal damage does not occur in the field emission device or the component of the cathode panel.
[267] The electron-emitting portion forming layer made of the photosensitive material is a so-called negative resin (polymer having a characteristic of being polymerized or crosslinked by irradiation with exposure light, making it insoluble or poorly soluble in the developing solution and remaining until development), and an electron-emitting function It may be formed of a material having a. On the other hand, the electron-emitting part forming layer composed of a non-photosensitive material that transmits the exposure light may be formed of an inorganic or organic binder (for example, an inorganic binder such as silver paste or water glass, an organic binder such as epoxy resin or acrylic resin) and electrons. It may be formed of a material having an emission function, or may be formed of a metal compound solution in which a material having an electron emission function is dispersed. In the latter case, firing a metal compound fixes a substance having an electron-emitting function to a matrix including metal atoms derived from the metal compound on the cathode electrode surface or the light transmitting layer surface. The matrix is preferably made of a conductive metal oxide, and more preferably, composed of stone oxide, indium oxide, indium oxide, zinc oxide, antimony oxide, or antimony oxide. After firing, it is possible to obtain a state in which a part of the substance having an electron-emitting function is filled in the matrix, and a state in which the entire substance having the electron-emitting function is embedded in the matrix can be obtained. It is preferable that the volume resistivity of the matrix is 1 × 10 ⁻⁹ Ω · m to 5 × 10 ⁻⁶ Ω · m.
[268] The metal compound (dispersion) constituting the metal compound solution includes, for example, an organometallic compound, an organic acid metal compound or a metal salt (for example, chloride, nitrate, acetate). The organic acid metal compound solution is dissolved, for example, an organic stone (tin) compound, an organic indium compound, an organic zinc compound, or an organic antimony compound with an acid (for example, hydrochloric acid, nitric acid, or acetic acid), and an organic solvent (for example, Toluene, butyl acetate, isopropyl alcohol). Moreover, what dissolved the organic compound, the organic zinc compound, and the organic antimony compound in the organic solvent (for example, toluene, butyl acetate, isopropyl alcohol) can be illustrated as an organometallic compound solution. The preferred solution has a composition containing 100 parts by weight of the solution, 0.001-20 parts by weight of the substance having an electron-emitting function, and 0.1-10 parts by weight of the metal compound. The solution may contain a dispersant or a surfactant. In some cases, organic solvents may be replaced by water as a solvent.
[269] The method of forming the electron-emitting part forming layer from the metal compound solution in which the substance having the electron-emitting function is dispersed includes, for example, a spray method, a spin coating method, a dipping method, a die coating method, and a screen printing method. Among these, the spray method is preferable from a viewpoint of the ease of application.
[270] The firing temperature of the metal compound is, for example, a temperature or a matrix containing metal atoms derived from the organometallic compound or the organic acid metal compound so that the metal salt is oxidized to become a conductive metal oxide. For example, what is necessary is just the temperature which can form electroconductive metal oxide), for example, it is preferable to set it as 300 degreeC or more.
[271] The material having an electron-emitting function includes the carbon nanotube configuration of the material constituting the cathode electrode. As carbon nanotube configurations, in particular carbon nanotubes and / or carbon nanofibers are used. More specifically, the electron emitting portion may be composed of carbon nanotubes, may be composed of carbon nanofibers, or may be composed of a composite of carbon nanotubes and carbon nanofibers. Macroscopically, carbon nanotubes or carbon nanofibers may be macroscopically powdery or thin. Carbon nanotube structures composed of carbon nanotubes and / or carbon nanofibers are known as PVD methods such as arc discharge method and laser ablation method, plasma CVD method, laser CVD method, thermal CVD method, vapor phase synthesis method, and gas phase growth method. It can manufacture or form by one of various CVD methods, such as these.
[272] In addition, it is preferable that the material having an electron emission function is selected from materials having a smaller work function Φ than the material constituting the cathode electrode. Such a material is determined based on the work function of the material constituting the cathode electrode, the potential difference between the gate electrode and the cathode electrode, the magnitude of the required emission electron current density, and the like. Specifically, the work function Φ of the material having an electron emission function is preferably 3 eV or less, preferably 2 eV or less. The material is carbon (Φ <1 eV), calcium (Φ = 2.14 eV), LaB ₆ (Φ = 2.66-2.76 eV), BaO (Φ = 1.6-2.7 eV), SrO (Φ = 2.66-2.76 eV), BaO (Φ = 1.6 to 2.7 eV), SrO (Φ = 1.25 to 1.6 eV), Y ₂ O ₃ (Φ = 2.0 eV), CaO (Φ = 1.6 to 1.86 eV), BaS (Φ = 2.05 eV), TiN ( Φ = 2.92eV) and ZrN (Φ = 2.92eV). Materials having an electron-emitting function are not necessarily required to have conductivity.
[273] Alternatively, the material having an electron emission function may be selected from materials in which the secondary electron gain δ is greater than that of the conductive material required to form the cathode electrode. That is, the material is silver (Ag), aluminum (Al), gold (Au), cobalt (Co), copper (Cu), molybdenum (Mo), niobium (Nb), nickel (Ni), platinum (Pt), Metals such as tantalum (Ta), tungsten (W) and zirconium (Zr); Semiconductors such as silicon (Si) and germanium (Ge); Inorganic groups such as carbon and diamond; And aluminum oxide (Al ₂ O ₃ ), barium oxide (BaO), beryllium oxide (BeO), calcium oxide (CaO), magnesium oxide (MgO), stone oxide (SnO ₂ ), belium (BaF ₂ ), calcium (CaF ₂ ) and the like. In addition, the substance having an electron emission function does not necessarily have to be conductive.
[274] The resist material which comprises an etching mask layer, a 1st etching mask layer, and a 2nd etching mask layer may be comprised with a well-known resist material. In the case where the etching mask layer, the first etching mask layer and the second etching mask layer are exposed by the back-roaming method, the resist material is decomposed by irradiation with a positive type of light, becomes soluble in a developer, and is developed. Resist material to be removed). In the case of exposure in the surface exposure method, the resist material is either a positive resist material or a negative resist material (a resist material which becomes polymerizable or crosslinked by exposure to light, becomes insoluble or poorly soluble in a developer, and remains until development). Is selected.
[275] In the " formation step of forming the electron-emitting part formation layer composed of the photosensitive material ", an electron-emitting part formation layer composed of the photosensitive material may be formed at least in the opening, and the electron-emitting part formation layer is formed in the opening, on the gate electrode and the insulating layer. You may also do it. In the " formation step of forming the electron-emitting part formation layer composed of the non-photosensitive material ", an electron-emitting part formation layer composed of the non-photosensitive material may be formed at least in the opening, and the electron-emitting part formation layer is formed on the entire surface (i.e., in the opening, the gate). On the electrode and the insulating layer). The electron emitting portion forming layer may be formed by, for example, a screen printing method or a spin coating method. Alternatively, the electron-emitting portion forming layer may be formed in the opening and on the gate electrode, or may be formed in an overlapping region of the gate electrode and the cathode electrode, and may be formed in the portion of the gate electrode and the insulating layer corresponding to the upper side of the cathode electrode. Also good. In this case, the electron emitting portion forming layer can be formed by, for example, a screen printing method.
[276] In the "opening formation and cathode electrode exposure process by exposure at the back side", exposure light is irradiated when the support member is exposed to the back light (second surface) side of the support member through the hole as an exposure mask. It is preferable to arrange an exposure light shielding material (mask) on the back side (second surface) side of the supporting member so that exposure light is not irradiated to portions of the insulating layer and the gate electrode which should not be.
[277] In the " opening by exposure on the back side and the cathode electrode exposure step ", the opening having a diameter larger than the diameter of the hole formed through the insulating side and the gate electrode on the hole is exposed to an excessively exposed insulating layer and the gate electrode ( That is, it can be formed by the method of over-exposure) and / or by the method in which the insulating layer and the gate electrode are excessively developed (i.e., the method of over developing).
[278] In the method for manufacturing a cold cathode field emission device according to the first aspect of the present invention, or the method for manufacturing a cold cathode field emission display device, step (F) is performed to below the mask layer opening using an etching mask layer. The gate electrode and the insulating layer are etched to form an opening having a diameter larger than the diameter of the hole over the insulating layer and the gate electrode on the hole. The opening may be formed by overetching the insulating layer and the gate electrode. In addition, in the method for manufacturing a cold cathode field emission device or the method for manufacturing a cold cathode field emission display device according to the first aspect of the present invention, step (F) is performed to perform a mask using a first etching mask layer. The gate electrode and the insulating layer under the layer opening are etched to form an opening having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole. The opening may be formed by overetching the insulating layer and the gate electrode.
[279] In the " opening forming step by exposure on the surface side ", an opening having a diameter larger than the diameter of the hole can be formed by exposing an etching mask layer and exposing through an appropriate shielding material (mask).
[280] In the " opening by exposure on the back side and light transmitting layer exposure step ", it is preferable to form an opening having a diameter larger than the diameter of the hole over the insulating side on the hole and the gate electrode. For this purpose, a method in which the insulating layer and the gate electrode are overexposed (i.e., an overexposure method) and / or a method in which the insulating layer and the gate electrode are excessively developed (i.e., an over developing method) is used.
[281] In the method for manufacturing a cold cathode field emission device according to the third aspect of the present invention, or the method for manufacturing a cold cathode field emission display device, step (G) is performed to below the mask layer opening using an etching mask layer. The gate electrode and the insulating layer are etched to form an opening. In this case, the openings preferably have a diameter larger than the diameter of the holes, and such openings can be formed by overetching the insulating layer and the gate electrode. In the manufacturing method of the cold cathode field emission device according to the third aspect of the present invention, or the manufacturing method of the cold cathode field emission display device, step (G) is performed to mask using the first etching mask layer. The gate electrode and the insulating layer under the layer opening are etched to form an opening. In this case, the openings preferably have a diameter larger than the diameter of the holes, and such openings can be formed by overetching the insulating layer and the gate electrode.
[282] In the "light transmission layer exposure process in the bottom part of an opening part", it is preferable to form the opening part which has a diameter larger than the diameter of a hole. For this purpose, a method in which the insulating layer and the gate electrode are overexposed (that is, an overexposure method), and / or a method in which the insulating layer and the gate electrode are excessively developed (ie, an over developing method) can be used.
[283] After formation of the electron emitting portion, it is preferable to perform a kind of activation treatment (cleaning treatment) on the surface of the electron emitting portion from the viewpoint of improving the emission efficiency of electrons from the electron emitting portion. Such treatment includes plasma treatment in a gas atmosphere such as hydrogen gas, ammonium gas, helium gas, argon gas, neon gas, methane gas, ethylene gas, acetylene gas or nitrogen gas.
[284] The planar shape of the hole or opening (the shape obtained by cutting the hole or opening in an imaginary plane parallel to the support member) can be any shape, such as circular, conical, square, polygonal, rounded rectangle, rounded polygon, and the like.
[285] The material of the anode electrode may be selected as needed based on the configuration of the cold cathode field emission display. That is, when the cold cathode field emission display device is of a transmissive type (the anode panel corresponds to the display surface), and the anode electrode and the phosphor layer are laminated on the substrate (constituting the anode panel) in order, The anode electrode itself needs to be transparent, and a transparent conductive material such as ITO (indium stone oxide) is used. When the cold cathode field emission display device is a reflective type (cathode panel corresponds to the display surface) or a transmissive type, when the phosphor layer and the anode electrode are laminated in order on the substrate, ITO is naturally used and aluminum (Al) is used. Or chromium (Cr) may also be used. When aluminum (Al) or chromium (Cr) is used to construct the anode electrode, the anode electrode has a thickness of 3 x 10 ^-8 m (30 nm) to 1.5 x 10 ^-7 m (150 nm), preferably 5 x It has a thickness of 10 ^-8 m (50 nm)-1 x 10 ^-7 m (100 nm). The anode electrode can be formed by vapor deposition or sputtering.
[286] The anode panel also prevents electrons rebounding from the phosphor layer or secondary electrons emitted from the phosphor layer from entering the other phosphor layer and preventing so-called optical crosstalk (color mixing) from occurring or rebounding from one phosphor layer. Alternatively, a plurality of partitions may be provided to prevent secondary electrons emitted from the phosphor layer from entering the other phosphor layer beyond the partition wall and colliding with the phosphor layer.
[287] The planar shape of the partition wall is lattice (grill), that is, for example, the shape corresponding to one pixel, for example, the planar shape can be arranged to surround the substantially rectangular (dot-shaped) phosphor layer, or almost rectangular Or a strip or stripe shape extending in parallel with two opposite sides of the stripe-shaped phosphor layer. When the partition wall has a lattice shape, it may be a shape that continuously surrounds all four sides of one phosphor layer, or may be a shape that is discontinuously enclosed. In the case where the partition wall has an object shape or a stripe shape, it may be a continuous shape or a discontinuous shape. After the partition is formed, the partition may be polished to planarize the upper surface of the partition.
[288] Although the flag matrix which absorbs the light emitted from the phosphor layer is formed between the partition wall between the phosphor layer and the phosphor layer and the substrate, it is good from the viewpoint of improving the contrast of the surface image. As the material constituting the flag matrix, it is preferable to select a material that absorbs 99% or more of the light from the phosphor layer. As such a material, carbon, a thin metal film (for example, chromium, nickel, aluminum, molybdenum, or such an alloy), a metal oxide (for example, chromium oxide), a metal nitride (for example, chromium nitride) And heat-resistant organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and the like. Specific examples thereof include photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium oxide layers. can do. On the other hand, in the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate.
[289] When the cathode panel and the anode panel are joined at the periphery, the bonding may be performed using an adhesive layer, or may be performed in combination with a frame and an adhesive layer made of an insulating rigid material such as glass and ceramic. When using a frame and an adhesive layer together, by selecting the height of a frame suitably, the facing distance between a cathode panel and an anode panel can be set long compared with the case where only an adhesive layer is used. On the other hand, the constituent material of the adhesive layer is frit glass, but a so-called low melting point metal material having a melting point of about 120 to 400 ° C may be used. As a low melting metal material, In (indium: melting | fusing point 157 degreeC); Low-melting alloys of indium-gold type; Tin-based high temperature solder such as Sn ₈₀ Ag ₂₀ (melting point 220-370 ° C), Sn ₉₅ Cu ₅ (melting point 227-370 ° C): Pb _97.5 Ag _2.5 (melting point 304 ° C), Pb _94.5 Ag _5.5 (melting point 304 -365 ° C.), Pb-based solder such as Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.); Zinc (zn) -based solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Tin-zinc-based standard solders such as Sn ₅ Pb ₉₅ (melting point 300-314 ° C.) and Sn ₂ Pb ₉₈ (melting point 316-322 ° C.); Examples of Au ₈₈ Ga ₁₂ (melting point 381 ° C.) and the like (the above subscripts all represent atomic%) can be exemplified.
[290] When joining three of a board | substrate, a support member, and a frame, these three members can be joined simultaneously. Alternatively, the frame may be first bonded to either the substrate or the support member in the first step, and the other of the substrate and the support member may be bonded to the frame in the second step. When three or more members are joined at the same time and the bonding is performed in a high vacuum atmosphere in the second step, the space enclosed by the substrate, the supporting member and the frame becomes a vacuum at the same time as the bonding. Alternatively, after the three members are joined, the space surrounded by the substrate, the supporting member, and the frame can be exhausted to obtain a vacuum. When evacuating after bonding, the atmosphere for the bonding may have an atmospheric pressure or a reduced pressure. The gas constituting the atmosphere may be an atmosphere or may be inert including nitrogen gas and a gas belonging to group 0 of the periodic table (for example, Ar gas).
[291] When exhausting after bonding, exhausting can be carried out through a chip tube previously connected to the substrate and / or the support member. The chip tube is typically formed using a glass tube, and is formed around a frit glass or around a through hole provided in an ineffective region of the substrate and / or support member (i.e., a region other than an effective region serving as a display portion). Bonded using the above-mentioned low melting point metal material, and after the space reaches a predetermined degree of vacuum, the chip tube is sealed by heat fusion. When the cold cathode field emission display is heated and then dropped before sealing, it is possible to release the residual gas to the space, and it is possible to remove the residual gas out of the space by exhaust.
[292] In the manufacturing method of the present invention, since the electron emission portion is formed by the back exposure method, the electron emission portion can be formed in a self-alignment with respect to the opening at the bottom of the opening formed through the gate electrode and the insulating layer. In the method for manufacturing a cold cathode field emission device or a method for manufacturing a cold cathode field emission display device according to any one of Embodiments 1A to 1D, and Embodiments 3A to 3D, the back exposure is provided. Since the opening is formed by the method, the opening can be formed self-aligning with respect to the hole in the gate electrode and the insulating layer.
[293] EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated based on embodiment of this invention with reference to drawings.
[294] Example 1
[295] Example 1 is a cold cathode field emission device according to the first aspect of the present invention (hereinafter abbreviated as " field emission element ") and a method of manufacturing the field emission element according to the first aspect of the present invention, the first aspect of the present invention. A cold cathode field emission display device (hereinafter abbreviated as " display device ") and a method for manufacturing a display device according to the first aspect of the present invention.
[296] FIG. 1 shows a schematic partial cross-sectional view of a display device of Embodiment 1, and FIG. 4B shows a schematic partial cross-sectional view of a field emission device. When the cathode panel CP and the anode panel AP are disassembled, the schematic partial perspective view is substantially the same as that shown in FIG.
[297] The field emission device of Example (1),
[298] (a) a stripe cathode electrode 11 provided on the support member 10 and extending in the first direction;
[299] (b) an insulating layer 12 formed on the support member 10 and the cathode electrode 11,
[300] (c) a stripe gate electrode 13 provided on the insulating layer 12 and extending in a second direction different from the first direction;
[301] (d) an opening 14 provided in the gate electrode 13 and the insulating layer 12, a first opening 14A provided in the gate electrode 13, and a second opening 14B provided in the image saving layer 12;
[302] (e) including an electron emitting portion 15,
[303] Electrons are emitted from the electron emitting portion 15 exposed to the bottom portion of the opening 14.
[304] A portion of the cathode electrode 11 positioned at the bottom of the opening 14 is provided with a hole 11A reaching the support member 10, and the electron-emitting portion 15 is located at the bottom of the opening 14. It is formed in the hole 11A in the part of the cathode electrode 11 which is located. The dead image of the stripe cathode electrode 11 and the dead image of the stripe gate electrode 13 are orthogonal to each other.
[305] The display device of the embodiment (1) is formed from the cathode panel CP and the anode panel AP, and has a plurality of pixels. The cathode panel CP and the electron emission region in which the above-mentioned field emission elements are provided are formed in the effective region in the form of a two-dimensional matrix. On the other hand, the anode panel AP is formed on the substrate 30 and the substrate 30, and formed of a phosphor layer 31 (red luminescent phosphor layer 31R, green luminescent phosphor layer 31B) formed according to a predetermined pattern. ) And an anode electrode 33 composed of, for example, an aluminum thin film in a sheet form covering the entire surface of the effective area. The black matrix 32 is formed on the substrate 30 between the phosphor layer 31 and the phosphor layer 31. In addition, the black matrix 32 can be omitted. In addition, when a monochrome display device is intended, the phosphor layer 31 does not necessarily need to be provided according to a predetermined pattern. The anode electrode made of a transparent conductive film such as ITO may be provided between the substrate 30 and the phosphor layer 31, or the anode electrode 33 made of a transparent conductive film provided on the substrate 30. And a phosphor layer 31 and a black matrix 32 formed on the anode electrode 33 and aluminum formed on the phosphor layer 31 and the black matrix 32 and electrically connected to the anode electrode 33. It can comprise with the connected light reflection conductive film.
[306] In addition, the display device includes a substrate 30 on which the anode electrode 33 and the phosphor layers 31 (31R, 31G, 31B) are formed, and the support member 10 on which the field emission device is formed. The field emission device is disposed to face each other, and the substrate 30 and the support member 10 are joined to each other at the periphery thereof. Specifically, the cathode panel CP and the anode panel AP are joined via the frame 34 at their peripheral portions. In addition, a through hole 36 for vacuum exhaust is provided in an invalid region of the cathode panel CP, and the chip tube 37 sealed after vacuum exhaust is connected to the through hole 36. The frame 34 is made of ceramics or glass, and the height is, for example, 1.0 mm. In some cases, only the adhesive layer may be used instead of the frame 34.
[307] One pixel is constituted by the cathode electrode 11, the electron emitting portion 15 formed thereon, and the phosphor layer 31 arranged in the effective region of the anode panel AP so as to face the field emission element. In the effective area, these pixels are arranged in hundreds of thousands to millions of orders.
[308] A relative negative voltage is applied from the cathode electrode control circuit 40 to the cathode electrode 11, a relative constant voltage is applied from the gate electrode control circuit 41 to the gate electrode 13, and a gate electrode is applied to the anode electrode 33. Also by (13), a high constant voltage is applied from the anode electrode control circuit 42. In the case of displaying in such a display device, for example, a scan signal is input from the cathode electrode control circuit 40 to the cathode electrode 11, and a video signal from the gate electrode control circuit 41 to the gate electrode 13. Enter. Conversely, the video signal may be input from the cathode electrode control circuit 40 to the cathode electrode 11, and the scan signal may be input from the gate electrode control circuit 41 to the gate electrode 13. By the electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, electrons are emitted from the electron emission unit 15 based on the electron tunnel effect, and the electrons are discharged from the anode electrode 33. Attracted to and impinges on the phosphor layer 31. As a result, the phosphor layer 31 is excited to emit light, and a desired image can be obtained.
[309] Hereinafter, the method of manufacturing the field emission device and the display device in Example (1) will be described with reference to Figs. 2A to C, 3A, B, and 4A and B. In addition, in the drawings for explaining a method of manufacturing the field emission device, only one electron emission unit or components thereof are shown in the overlapping region of the cathode electrode 11 and the gate electrode 13 for the sake of simplicity. .
[310] [Process-100]
[311] First, on the surface (first surface) of the support member 10 that transmits the exposure light, the first direction (having a hole 1A exposed by the support member at the bottom) and made of a material which does not transmit the exposure light ( The cathode electrode 11 extending in the direction perpendicular to the surface of the drawing is formed. That is, the "cathode electrode formation process" is performed. Specifically, white glass (B-270 SSCHOTT Co., Ltd.), blue glass (soda-lime glass), alkali free glass (OA2 Nippon Electric Glass KK), etc. through which exposure light (UV light for exposure) can pass. On the surface (first surface) of the supporting member 10 made of a glass substrate, a photosensitive silver paste is printed by, for example, a screen printing method. And after exposing the photosensitive silver paste through a photomask, it develops and bakes. In this way, a stripe-shaped cathode electrode 11 having a hole 11A exposed at the bottom thereof can be obtained. (See FIG. 2A).
[312] [Process-110]
[313] Next, the insulating layer 12 which consists of an exposure material which permeate | transmits exposure light is formed in the whole surface. That is, "the formation process of the insulating layer which consists of exposure photosensitive material" is performed. Specifically, for example, a positive photosensitive glass paste is printed on the entire surface (specifically, on the cathode electrode 11 and the support member 10 including the hole 11A) by screen printing. And dry.
[314] [Process-120]
[315] Thereafter, on the insulating layer 12, a gate electrode 13 made of a photosensitive material and extending in a second direction different from the first direction (left and right directions in the drawing) is formed (see FIG. 2B). . That is, the "step of forming a gate electrode made of the photosensitive material" is executed. Specifically, a stripe gate electrode 13 can be obtained by printing a positive photosensitive silver paste on the insulating layer 12 by screen printing and drying.
[316] [Process-130]
[317] Next, with the hole 11A as an exposure mast, the insulating layer 12 above the hole 11A is referred to the exposure light (specifically, ultraviolet rays) from the back surface (second surface) side of the supporting member 10. And part of the gate electrode 13 are exposed (Fig. 2C). Thereafter, the insulating layer 12 and the gate electrode 13 are formed, and the portion of the insulating layer 12 and the portion of the gate electrode 13 above the hole 11A are removed to remove the portion of the upper portion of the hole 11A. In the insulating layer 12 and the gate electrode 13, an opening 14 having a diameter larger than the diameter of the hole 11A is formed, and a part of the cathode electrode 11 is exposed on the bottom surface of the opening 14 ( 3a).
[318] That is, the opening formation and the cathode electrode exposure process by exposure from the back surface side are performed. Thereafter, the material constituting the insulating layer 12 and the gate electrode 13 is fired. The opening 14 is formed self-aligning with respect to the hole 11a.
[319] In the step-130, the insulating layer 12 which should not irradiate the exposure light when irradiating the exposure light from the back surface (second surface) side of the supporting member 10 using the hole 11a as the exposure mask. It is preferable to arrange the exposure light shielding material (mask 19) on the back surface (second surface) side of the supporting member 10 so that the exposure light is not irradiated to the portion of the portion and the portion before the gate 13.
[320] Moreover, in step -130, in order to form the opening part 14 which has a diameter larger than the diameter of the hole 11a in the insulating layer 12 and the gate electrode 13 on the upper side of the hole 11a, the insulating layer (12) and a method of excessively exposing the gate electrode 13 (i.e., an overexposure method) and / or a method of excessively developing the insulating layer 12 and the gate electrode 13 (i.e., over developing) Method) may be employed.
[321] [Process-140]
[322] Thereafter, at least in the openings, an electron emitting portion forming layer made of a photosensitive material is formed (see Fig. 3B). That is, the formation process of the electron emission part formation layer which consists of a photosensitive material is performed. Specifically, the electron-emitting portion forming layer 20 formed of the photosensitive material is formed by printing a negative photosensitive conductive paste containing carbon nanotubes on the entire surface including the inside of the opening 14 by screen printing. Can be formed. Carbon nanotubes are manufactured by the arc discharge method, and have an average diameter of 30 nm and an average length of 1 μm. The carbon nanotubes in the following description are also the same.
[323] [Process-150]
[324] Subsequently, using the hole 11a as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back surface (second surface) side of the supporting member 10, and the electron-emitting part forming layer on the upper side of the hole 11a. The part of 20 is exposed (refer FIG. 4A). When the exposure light is irradiated from the back surface (second surface) side of the supporting member 10 using the hole 11a as the exposure mask, the exposure light is applied to a portion of the electron-emitting part forming layer 20 that should not irradiate the exposure light. It is preferable to arrange the exposure light shielding material (mask 19) on the back surface (second surface) side of the supporting member 10 so as not to be irradiated. Thereafter, the electron-emitting part formation layer 20 is developed and a portion of the electron-emitting part formation layer 20 on the upper side of the hole 11a is left, and thus, the electron-emitting part over the cathode electrode 11 in the hole 11A. An electron emission section 15 composed of the formation layer 20 is formed (see FIG. 4B). In other words, the electron-emitting portion forming step on the cathode electrode by exposure and development is performed. Thereafter, the material constituting the electron emission portion forming layer 20 is fired. The electron-emitting part 15 is formed self-aligning with respect to the hole 11a. That is, the electron emission unit 15 can be obtained by the back exposure method, and at the bottom of the opening 14 formed in the gate electrode 13 and the insulating layer 12, electrons can be self-aligned with respect to the opening 14. The discharge part 15 may be formed.
[325] [Process-160]
[326] Thereafter, the display device is assembled. Specifically, the anode panel AP and the cathode panel CP are disposed so that the exposure body layer 31 and the field emission element face each other, and the anode panel AP and the cathode panel CP (more specifically, the substrate ( 30 and the supporting member 10 are joined at the peripheral portion via the frame 34. At the time of joining, the frame 34, the anode panel AP, the joining portion, the anode panel AP, the cathode panel CP, and the frame 34 were bonded together, and the frit glass was dried as preliminary firing, at about 450 ° C. The main firing for 10 to 30 minutes is performed. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, the frame 34 and the frit glass is exhausted through the through hole 36 and the chip tube 37, and the pressure in the space is 10- ^. At the point of reaching ⁴ Pa, the chip tube is sealed by heat melting. In this way, the space surrounded by the anode panel AP, the cathode panel CP, and the frame 34 can be made into a vacuum. After that, wiring with the necessary external circuit is completed to complete the display device.
[327] In the manufacturing process of the field emission device, when the surface state of some or all of the carbon nanotubes changes (for example, oxygen atoms or oxygen molecules are adsorbed on the surface thereof) and is inactive to the field emission. There is. In such a case, after [Step-150], it is preferable to perform plasma treatment in the hydrogen gas atmosphere with respect to the electron-emitting part 15, whereby the electron-emitting part 15 is activated and the electron-emitting part 15 is activated. The emission efficiency of electrons in () can be further improved. Table 1 shows the conditions of the plasma treatment. In addition, such a process can be applied also in the various Example demonstrated below.
[328] Gas usedH ₂ = 100 sccm Power1000 W Support member applied power50 V Reaction pressure0.1 Pa Support member temperature300 ℃
[329] Example 2
[330] Embodiment 2 relates to a method of manufacturing a field emission device according to the first aspect of the present invention and a method of manufacturing a display device according to the aspect of the first aspect, and furthermore, a field emission device and a display according to the first aspect of the present invention. Regarding the device
[331] In addition, since the structure and the structure of the field emission device and the display device of Example 2 and Example 3-Example 6 mentioned later are substantially the same as the structure and structure of the field emission element and the display device of Example 1, Description is omitted.
[332] Hereinafter, the method of manufacturing the field emission device and the display device in Example 2 will be described with reference to FIGS. 5A, 5B, 6A, 6B, and 7.
[333] [Process-200]
[334] First, in the same manner as in [Step-100] to [Step 130] of Example 1, a "cathode electrode forming step", "a step of forming an insulating layer made of a light-transmitting photosensitive material", and a "gate formed of a photosensitive material An electrode forming step "and an opening forming and cathode electrode exposing step by exposure on the back side".
[335] [Process-210]
[336] Thereafter, at least the opening 14 is formed with an electron emitting portion forming layer 20A made of a non-photosensitive material that transmits the exposure light (see Fig. 5A). That is, "the formation process of the electron emission part formation layer which consists of a non-photosensitive material" is performed. Specifically, a mixed product of, for example, an inorganic binder such as silver paste or water glass, an organic binder such as an epoxy resin or an acrylic resin, and, for example, carbon nanotubes, is screened on the entire surface including the inside of the opening 14. Since it is printed and dried by the printing method, the electron emitting portion forming layer 20A made of a non-photosensitive material that transmits the exposure light can be formed.
[337] [Process-220]
[338] Next, an etching mask layer 21A made of a negative resist material is formed on the entire surface (see FIG. 5B). That is, the "etching mask layer forming process" is performed.
[339] [Process-230]
[340] Next, using the hole 11A as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10, and the etching mask layer 21 above the hole 11A is provided. ) Is exposed (see FIG. 6A), and the etching mask layer 21 is developed so that the etching mask layer 21 is formed on the electron-emitting portion forming layer 20A located at the bottom of the opening 14. ) (See FIG. 6B). That is, the "etching mask layer exposure and development" process is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, the exposure light is exposed to a portion of the etching mask layer 21 which should not be exposed to the exposure light. It is preferable to arrange the exposure light shielding material (mask 19) on the back surface (second surface) side of the supporting member 10 so as not to be irradiated.
[341] [Process-240]
[342] Thereafter, after etching the electron-emitting portion forming layer 20A using the etching mask layer 21, the etching mask layer 21 is removed, and electrons are formed from the gate electrode 11 over the hole 11A. An electron emitting portion 15 composed of the emitting portion forming layer 20A is formed (see FIG. 7). That is, the "electron emission part formation process on the cathode electrode based on etching" is performed. Thereafter, the material constituting the electron emitting portion forming layer 20A is fired. The electron emitting portion 15 is formed self-aligning with respect to the hole 11A. That is, the electron emitting portion 15 can be obtained by the back exposure method, and the electron emitting portion 15 is self-aligned with respect to the opening of the opening 14 formed in the gate electrode 13A and the insulating layer 12. Can be formed.
[343] [Process-250]
[344] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[345] In addition, the electron emission part forming layer 20A may be formed based on a metal compound solution in which carbon nanotubes are dispersed. That is, in [Step -210], a metal compound solution composed of an organic acid metallization in which the carbon nanotube structure is dispersed is applied to the whole surface, for example, by a spray method. Specifically, the metal compound solution illustrated in Table 2 below is used. In the metal compound solution, the organic stone compound and the organic indium compound are in a state dissolved in an acid (for example, hydrochloric acid, acetic acid or nitric acid). In application | coating, the support member is heated at 70-150 degreeC. The application atmosphere is the air atmosphere. After coating, the supporting member is heated for 5 to 30 minutes, and butyl acetate is sufficiently evaporated. In this way, when the coating member is heated, the drying of the coating solution starts before the carbon nanotubes self-leveling in the direction in which the carbon nanotubes horizontally approach the surface of the cathode electrode, so that the carbon nanotubes do not become horizontal. Carbon nanotubes can be arranged on the surface of the carbon electrode in a state. That is, it is possible to arrange the carbon nanotubes in a state in which the tip portion of the carbon nanotubes faces the anode electrode, in other words, in a direction in which the carbon nanotubes are close to the normal direction of the support member. In addition, the metal compound solution of the composition shown in Table 2 may already be prepared, the metal compound dissolution which does not add the carbon nanotube may be manufactured, and the carbon nanotube and the metal compound solution may be mixed before application | coating. In addition, in order to improve the dispersibility of the carbon nanotubes, ultrasonic waves may be irradiated when the metal compound solution is prepared.
[346] Organic Compounds and Organic Indium Compounds0.1 to 10 parts by weight Dispersant (sodium dedecyl lactate)0.1 to 5 parts by weight Carbon nanotubes0.1 to 20 parts by weight Butyl acetatebalance
[347] In addition, as an organic acid metal compound solution, when an organic stone compound is dissolved in an acid, stone oxide is obtained as a matrix, and when an organic indium compound is dissolved in an acid, indium oxide is obtained as a matrix, and an organic zinc compound is dissolved in an acid. In this case, zinc oxide is obtained as a matrix, and when an organic antimony compound is dissolved in an acid, an antimony oxide is obtained as a matrix, and when an organic antimony compound and an organic stone compound are dissolved in an acid, an organic stone antimony oxide is obtained as a matrix. . In addition, as an organometallic compound solution, when an organic stone compound is used, a stone is obtained as a matrix, when an organic indium compound is used, indium oxide is obtained as a matrix, and when an organic zinc compound is used, zinc oxide is obtained as a matrix. When an organic antimony compound is used, antimony oxide is obtained as a matrix, and when an organic antimony compound and an organic stone compound are used, antimony oxide is obtained as a matrix. Alternatively, a solution of a metal chloride (for example, chlorite or indium chloride) may be used.
[348] In the step [240], after the electron emission unit 15 is obtained, the metal compound composed of the organic acid metal compound is fired to contain metal atoms (specifically, In and Sn) derived from the organic acid metal compound. It is possible to obtain an electron emitting portion 15 in which carbon nanotubes are fixed to the surface of the cathode electrode 11 and the support member 10 in a matrix (specifically, a metal oxide, and more specifically, ITO). Firing can be carried out in an air atmosphere at 350 ° C. for 20 minutes. In this way, the volume resistivity of the obtained matrix is about 5 x 10 ^-7 Ω · m. By using the organic acid metal compound as a starting material, a matrix made of ITO can be formed even at a low temperature of 350 ° C. In place of the organic acid metal compound solution, an organic metal compound solution may be used, and when a solution of a metal chloride (for example, chlorine or indium chloride) is used, calcination of the chloride and indium chloride is caused by calcination. And a matrix 25 made of ITO is formed.
[349] After the execution of [Step-240], the matrix is etched for 1 to 30 minutes using hydrochloric acid at 10 to 60 ° C. to remove unnecessary portions of the electron emitting portion forming layer 20A. In addition, when carbon nanotubes still exist other than a desired area, it is preferable to etch the carbon nanotubes by the oxygen plasma etching treatment under the conditions illustrated in Table 3 below. In addition, although the bias power may be good even at 0 W, that is, as a direct current, it is preferable to add a bias power. In addition, you may heat a support member at about 80 degreeC, for example.
[350] Device usedRIE device Introduction gasGas containing oxygen Plasma excitation power500 W Bias power0 to 150 W Processing time10 seconds or more
[351] Alternatively, the carbon nanotubes may be etched by the weight etching treatment under the conditions illustrated in Table 4.
[352] Use solutionKMnO ₄Temperature20 to 120 ° C Processing time10 seconds to 20 minutes
[353] Example 3
[354] Embodiment 3 relates to a method of manufacturing a field emission device according to the first aspect of the present invention, and a method of manufacturing a display device according to the first aspect of the present invention, and furthermore, to a field emission device and a display according to the first aspect of the present invention. Regarding the device
[355] Hereinafter, a method of manufacturing the field emission device and the display device in Example 3 will be described with reference to FIGS. 8A, 8B, and 9A, 9B.
[356] [Process-300]
[357] First, in the same manner as in [Step-100] of Example 1, the “cathode electrode forming step” is executed.
[358] [Process-310]
[359] Thereafter, an insulating layer 12A made of a non-photosensitive material that transmits the exposure light is formed on the entire surface. That is, "the formation process of the insulating layer which consists of an exposure-sensitive non-photosensitive material" is performed. The insulating layer 12A may be made of, for example, a small SiO ₂ material, and may be formed by, for example, a screen printing method.
[360] [Process-320]
[361] Next, on the insulating layer, a gate electrode 13A made of a non-photosensitive material that transmits exposure light and extending in a second direction different from the first direction is formed. In other words, " the process of forming the gate electrode made of the non-photosensitive material " Specifically, for example, a stripe gate electrode 13A can be obtained by forming a conductor layer made of ITO on the entire surface by sputtering, and then patterning the conductor layer.
[362] [Process-330]
[363] Thereafter, an etching mask layer 21A made of a positive resist material is formed on the gate electrode 13A and the insulating layer 12A (see Fig. 8A). That is, "the etching layer formation process for etching on a gate electrode and an insulating layer" is performed.
[364] [Process-340]
[365] Next, the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, and the etching mask layer 21A is exposed (see FIG. 8B). The etching mask layer 21A is developed to form a mask layer opening 22A in a portion of the etching mask layer 21A above the hole 11A (see FIG. 9A). That is, the "mask layer opening forming process to the etching mask layer" is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, the exposure light is exposed to a portion of the etching mask layer 21A which should not be exposed to the exposure light. It is preferable to arrange the exposure light shielding material (mask 19) on the back surface (second surface) side of the supporting member 10 so as not to be irradiated.
[366] [Process-350]
[367] Thereafter, after etching the gate electrode 13A and the insulating layer 12A under the mask layer opening 22A using the etching mask layer 21A, the etching mask layer 21A is removed to remove the holes ( An opening 14 having a diameter larger than the diameter of the hole 11A is formed in the insulating layer 12A and the gate electrode 13A above the 11A, and the cathode electrode 11 is formed at the bottom of the opening 14. A portion is exposed (see FIG. 9B). In addition, such an opening 14 can be achieved by overetching the insulating layer 12A and the gate electrode 13A. Alternatively, in step [340], a method of excessively exposing the insulating layer 12A and the gate electrode 13A (i.e., an overexposure method), and / or the insulating layer 12A and the gate electrode ( The excessively developed method of 13A) (i.e., the over developing method) may be used.
[368] [Process-360]
[369] Subsequently, [Step-140] ("Formation of forming an electron-emitting part formation layer made of photosensitive material") of Example 1 and [Step-150] ("Step of forming an electron-emitting part on the cathode electrode by exposure and development") ).
[370] [Process-370]
[371] Thereafter, the execution apparatus is assembled in the same manner as in the [Step-160] of the first embodiment.
[372] Example 4
[373] Embodiment 4 relates to a method of manufacturing a field emission device according to the first aspect of the present invention, and a method of manufacturing a display device according to the first aspect of the present invention, furthermore, to a field emission device and display according to the first aspect of the present invention. Regarding the device
[374] Hereinafter, the method of manufacturing the field emission device and the display device according to the fourth embodiment will be described with reference to FIGS. 10A, 10B, 11A, 11B, 12A, and 12B. 13, (A), (B), and FIG. 14 are demonstrated.
[375] [Process-400]
[376] First, [Step-100] ("Cathode Formation Step") of Example 1, [Step-310] ("Step of Forming Insulating Layer Comprising Exposure Transmissive Non-Photosensitive Material") of Example 3, [Step ("Formation process of gate electrode made of non-photosensitive material").
[377] [Process-410]
[378] Thereafter, a first etching mask layer 23A made of a positive resist material is formed on the gate electrode 13A and the insulating layer 12A (see Fig. 10A). That is, "the mask layer forming process for the first etching mask on the gate electrode and the insulating layer" is performed.
[379] [Process-420]
[380] Next, the exposure light (specifically, ultraviolet rays) was irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as an exposure mask, and the first etching mask layer 23A was exposed. Subsequently (see FIG. 10B), the first etching mask layer 23A is developed to form a mask layer opening 24A in the portion of the first etching mask layer 23A above the hole 11A. That is, the "mask layer opening forming process to the first etching mask layer" is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 with the hole 11A as the exposure mask, the portion of the first etching mask layer 23A which should not be irradiated with the exposure light is provided. It is preferable to arrange the exposure light shielding material (mask 19) on the back (second surface) side of the supporting member 10 so that the exposure light is not irradiated.
[381] [Process-430]
[382] Thereafter, the gate electrode 13A and the insulating layer 12A under the mask layer opening 24A are etched using the first etching mask layer 23A, and then the first etching mask layer 23A is removed. Thus, an opening 14 having a diameter larger than the diameter of the hole 11A is formed in the insulating layer 12A and the gate electrode 13A above the hole 11A, and the cathode electrode is formed at the bottom of the opening 14. A part of (11) is exposed (see FIG. 11B). In addition, such an opening 14 can be achieved by overetching the insulating layer 12A and the gate electrode 13A. Alternatively, in [Step-420], a method of excessively exposing the insulating layer 12A and the gate electrode 13A (ie, an overexposure method), and / or the insulating layer 12A and the gate electrode ( The excessively developed method of 13A) (i.e., the over developing method) may be used.
[383] [Process-440]
[384] Next, in the same manner as in [Step-210] of Example 2 or a modification thereof, the " step of forming an electron-emitting part formation layer made of a non-photosensitive material " is performed (see Fig. 12A).
[385] [Process-450]
[386] Thereafter, a second etching mask layer 23B made of a negative resist material is formed on the entire surface (see Fig. 12 (B)). In other words, " second etching mask layer forming step "
[387] [Process-460]
[388] Then, using the hole 11A as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10 to form a second etching mask layer above the hole 11A. After exposing (23B) (see FIG. 13 (A)), the second etching mask layer 23B is developed to form a second etching mask on the electron-emitting portion forming layer 20A located at the bottom of the opening 14. Leave layer 23B (see FIG. 13 (B)). That is, the "second etching mask layer exposure and development process" is executed. Further, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 with the hole 11A as the exposure mask, the portion of the second etching mask layer 23B which should not be irradiated with the exposure light is provided. It is preferable to arrange the exposure light shielding material (mask 19) on the back (second surface) side of the supporting member 10 so that the exposure light is not irradiated.
[389] [Process-470]
[390] Thereafter, in the same manner as in the [Step-240] of the second embodiment or a modification thereof, the electron emitting portion forming layer 20A is etched using the second etching mask layer 23B, and then the second etching mask layer ( 23B is removed, and the electron emission part 15 which consists of 20 A of electron emission part formation layers is formed from the cathode electrode 11 in the hole 11A (refer FIG. 14).
[391] [Process-480]
[392] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[393] Example 5
[394] Embodiment 5 relates to a method of manufacturing the field emission device according to the second aspect of the present invention, and a method of manufacturing the display device according to the second aspect. Further, the field emission device and display according to the first aspect of the present invention. Regarding the device
[395] Hereinafter, a method of manufacturing the field emission device and the display device in Example 5 will be described with reference to FIGS. 15A, 15B, and 16.
[396] [Process-500]
[397] First, in the same manner as in [Step-100] of Example 1, the “cathode electrode forming step” is executed. The cathode electrode 11 extends in the first direction (the direction perpendicular to the surface of the drawing).
[398] [Process-510]
[399] Next, an insulating layer 12B made of a photosensitive material is formed on the entire surface. That is, "the formation process of the insulating layer which consists of a photosensitive material" is performed. Specifically, the negative photosensitive glass paste is printed on the entire surface (specifically, on the cathode electrode 11 and the support member 10 including the inside of the hole 11A) by screen printing and dried. .
[400] [Process-520]
[401] Thereafter, a gate electrode 13B made of a photosensitive material that transmits exposure light and extends in a second direction different from the first direction is formed on the insulating layer 12B (see Fig. 15A). That is, the "step of forming a gate electrode composed of a photosensitive material which transmits exposure light" is executed. Specifically, since the negative photosensitive silver paste is printed and dried by the screen printing method, the stripe gate electrode 13B can be obtained. In addition, the silver paste transmits the exposure light in the exposure step. The stripe gate electrode 13B extends in a second direction different from the first direction (left and right directions in the drawing).
[402] [Process-530]
[403] Next, after the exposure light (specifically, ultraviolet rays) is irradiated to the gate electrode 13B and the insulating layer 12B from the surface (first surface) side of the supporting member 10 (see FIG. 15B). By developing the gate electrode 13B and the insulating layer 12B, the opening 14 having a diameter larger than the diameter of the hole 11A in the gate electrode 13B and the insulating layer 12B above the hole 11A. Is formed and a part of the cathode electrode 11 is exposed at the bottom of the opening 14 (see FIG. 16). That is, "the opening formation process by exposure from the surface side" is performed. In the exposure of the gate electrode 13B and the insulating layer 12B, an exposure light shielding material (mask 19A) having an exposure light shielding material larger than the hole 11A is provided on the surface of the support member 10 (first surface). It is preferable to arrange on the side.
[404] [Process-540]
[405] Subsequently, [Step-140] ("Formation of Formation Layer of Electron Emission Part Formed by Photosensitive Material" and [Step-150] ("Formation of Electron Emitting Part onto Cathode Electrode by Exposure and Development") of Example 1 ).
[406] [Process-550]
[407] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[408] The material constituting the insulating layer and the gate electrode may be positive. In this case, in [Step-530], the insulating layer and the gate electrode to which the exposure light is irradiated may be used as the portion where the opening must be formed.
[409] Example 6
[410] Embodiment 6 relates to a method of manufacturing the field emission device according to the second aspect of the present invention, and a method of manufacturing the display device according to the second aspect, and furthermore, to the field emission device and display according to the first aspect of the present invention. Regarding the device
[411] Hereinafter, the method of manufacturing the field emission device and the display device according to the sixth embodiment will be described with reference to Figs. 15A, 15B, 16A, 5B, 6A, and 6A. Reference will again be made to (B) and FIG. 7.
[412] [Process-600]
[413] First, in the same manner as in [Step-100] of Example 1, the “cathode electrode forming step” is executed.
[414] [Process-610]
[415] Thereafter, in the same manner as in [Step-510], [Step-520], and [Step-530] of Example 5, "Step of Forming Insulating Layer Made of Photosensitive Material" and "Photosensitive Material that Transmit Exposure Light" The formation process of the formed gate electrode "and" the opening formation process by exposure from the surface side "are performed (refer FIG. 15 (A), (B) and FIG. 16).
[416] [Process-620]
[417] Subsequently, in the same manner as in [Step-210] of Example 2 or a modification thereof, the " step of forming an electron-emitting part formation layer made of a non-photosensitive material " is performed (see FIG. In addition, in the same manner as in [Step-220] of Example 2, the “etching mask layer forming step” is executed (see FIG. 5B).
[418] [Process-630]
[419] Subsequently, the "etching mask layer exposure and development process" is performed in the same manner as in [Step-230] of Example 2 (see Figs. 6A and 6B). Thereafter, in the same manner as in the [Step-240] of the second embodiment or a modification thereof, the " step of forming an electron-emitting part onto the cathode electrode based on etching " is performed (see Fig. 7).
[420] [Process-640]
[421] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[422] (Example 7)
[423] Example 7 shows a field emission device according to the second aspect of the present invention, a method for manufacturing the field emission element according to the third aspect of the present invention, a display device according to the second aspect of the present invention, and a third aspect of the third aspect of the present invention. It relates to the manufacturing method of the display device according to the form.
[424] The seventh embodiment or the eighth embodiment to be described later is that the light transmitting layer 25 made of a conductive material or a resistive material that transmits exposure light is formed in at least a hole, and an electron emitting portion ( The point that 15) is formed on the light transmitting layer 25 is different from that of the first embodiment or the second embodiment to the sixth embodiment. Everything else is the same.
[425] The schematic partial cross-sectional view of the display device of the seventh embodiment is the same as the schematic partial cross-sectional view of the display device of the first embodiment shown in FIG. 1 by removing the point where the light transmitting layer is formed on the cathode electrode 11, Illustration and detailed description are omitted. Further, since the anode panel AP of the seventh embodiment also has the same structure as the anode panel AP of the first embodiment, detailed description thereof will be omitted. In addition, the schematic partial perspective view when disassembling the cathode panel CP and the anode panel AP is substantially the same as that shown in FIG.
[426] The field emission device of Example 7
[427] (a) a cathode electrode 11 provided on the support member 10 and extending in the first direction,
[428] (b) an insulating layer 12 formed on the support member 10 and the cathode electrode 11,
[429] (c) a gate electrode 13 provided on the insulating layer 12 and extending in a second direction different from the first direction;
[430] (d) an opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the second opening 14B provided in the insulating layer 12);
[431] (e) Electronic emitter 15
[432] Consisting of,
[433] Electrons are emitted from the electron emission unit 15 exposed at the bottom of the opening 14.
[434] A portion of the cathode electrode 11 located at the bottom of the opening 14 is provided with a hole 11A reaching the support member 10, and at least in the hole 11A, an air permeable layer 25 is formed. The electron emitting portion 15 is formed on the light transmitting layer 25 located at the bottom of the opening 14. The dead image of the stripe cathode electrode 11 and the dead image of the stripe gate electrode 13 are perpendicular to each other.
[435] Hereinafter, the method of manufacturing the field emission device and the display device in Example 7 is shown in Figs. 17A to 17C, Figs. 18A and 18B and Figs. 19A and 19B. It demonstrates with reference to.
[436] [Process-700]
[437] First, in the same manner as in [Step-100] of Example 1, the furnace 11 has a hole 11A having a support member exposed on the bottom (first surface) of the support member 10 that transmits exposure light. The cathode electrode 11 is formed of a material that does not transmit light light and extends in the first direction (vertical direction of the drawing surface). That is, the "cathode electrode formation process" is performed. Subsequently, a light transmitting layer made of at least a conductive material or a resistive material that transmits the exposure light is formed in the hole 11A (see FIG. 17A). That is, the "light transmitting layer forming process" is performed. Specifically, for example, the light transmitting layer 25 made of amorphous silicon (resistive material) is formed on the entire surface by CVD, and the light transmitting layer 25 is patterned by lithography and etching techniques. The light transmitting layer 25 is formed on the entire surface of the cathode electrode 11. Alternatively, the light transmitting layer 25 made of ITO (conductive material) is formed on the entire surface by the sputtering method, and the light transmitting layer 25 is patterned by lithography and etching techniques to form the entire cathode electrode 11. The light transmitting layer 25 is formed on the surface.
[438] [Process-710]
[439] Next, in the same manner as in [Step-110] of Example 1, an insulating layer 12 made of a photosensitive material that transmits exposure light is formed over the entire surface. That is, "the formation process of the insulating layer which consists of exposure photosensitive material" is performed.
[440] [Process-720]
[441] Thereafter, in the same manner as in [Step-120] of Example 1, the gate is made of a photosensitive material on the insulating layer 12 and extends in a second direction different from the first direction (left and right directions of the drawing). An electrode 13 is formed (see FIG. 17B). In other words, "the process of forming the gate electrode made of the photosensitive material" is performed.
[442] [Process-730]
[443] Next, using the hole 11A as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10, and the insulating layer 12 above the hole 11A is exposed. ) And the gate electrode 13 are exposed (FIG. 17C). Thereafter, the insulating layer 12 and the gate electrode 13 are developed to remove the insulating layer 12 and the gate electrode 13 above the hole 11A, thereby removing the insulating layer and the gate electrode above the hole 11A. The opening part 14 is formed in 13, and the light transmitting layer 25 is exposed in the bottom part of the opening part 14 (refer FIG. 18 (A)). That is, "the opening formation and the light transmitting layer exposure process by exposure from the back side" are performed. Thereafter, the material constituting the insulating layer 12 and the gate electrode 13 is fired. The opening 14 is formed self-aligning with respect to the hole 11A.
[444] In addition, in [Step-730], it is preferable to form the opening 14 having a diameter larger than the diameter of the hole 11A in the insulating layer 12 and the gate electrode 13 above the hole 11A. Do. For this purpose, an excessive exposure to the insulating layer 12 and the gate electrode 13 (i.e., an overexposure method), and / or excessive development of the insulating layer 12 and the gate electrode 13 Method (i.e., over-development method) can be used.
[445] [Process-740]
[446] Thereafter, in the same manner as in [Step-140] of Example 1, an electron emitting portion forming layer made of a photosensitive material is formed at least in the openings (see FIG. 18B). That is, "the formation process of the electron emission part formation layer which consists of a photosensitive material" is performed.
[447] [Process-750]
[448] Next, using the hole 11A as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10, and the electron-emitting part forming layer above the hole 11A. (20) is exposed (see FIG. 19A). When the exposure light is irradiated from the back (second surface) side of the supporting member 10 with the hole 11A as the exposure mask, the exposure light is applied to a portion of the electron-emitting part forming layer 20 that should not be exposed to the exposure light. In order not to irradiate, it is preferable to arrange the exposure light shielding material (mask 19) from the back (second surface) side of the supporting member 10. Thereafter, the electron emitting portion forming layer 20 is developed to touch the electron emitting portion forming layer 10 above the hole 11A, and the electron emitting portion composed of the electron emitting portion forming layer 20 on the light transmitting layer 25. The part 15 is formed (see FIG. 19B). That is, "the electron emission part formation process on the light transmission layer by exposure and image development" is performed. Thereafter, the material constituting the electron emission portion forming layer 20 is fired. The electron emitting portion 15 is formed self-aligning with respect to the hole 11A. That is, the electron emission unit 15 can be obtained by the back exposure method, and the electrons are self-aligned with respect to the opening 14 at the bottom of the opening 14 formed in the gate electrode 13 and the insulating layer 12. The discharge part 15 may be formed.
[449] [Process-760]
[450] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[451] Example 8
[452] Embodiment 8 relates to a method of manufacturing the field emission device according to the third aspect of the present invention, and a method of manufacturing the display device according to the third aspect, and furthermore, the field emission element according to the second aspect of the present invention. And display devices. In addition, since the structure and the structure of the field emission device and the display apparatus in Example 8 and Example 9-Example 12 mentioned later are substantially the same as the field emission element, the structure, and structure of Example 7, the detailed description is Omit.
[453] Hereinafter, a method of manufacturing the field emission device and the display device in Example 8 will be described with reference to FIGS. 20A, 20B and 21A, 22B, and 22. FIGS.
[454] [Process-800]
[455] First, in the same manner as in [Step-700] to [Step-730] of Example 7, formation of an insulating layer composed of a "cathode electrode forming step", a "light transmitting layer forming step", and a "light-transmitting photosensitive material" Process "," the process of forming the gate electrode which consists of photosensitive materials ", and the" process of forming an opening by exposure on the back side and the process of exposing the light transmitting layer ".
[456] [Process-810]
[457] Thereafter, at least the opening 14 is formed with an electron emitting portion forming layer 20A made of a non-photosensitive material that transmits the exposure light (see FIG. 20A). That is, "the formation process of the electron emission part formation layer which consists of a non-photosensitive material" is performed. Specifically, the same steps as in [Step-210] of Example 2 or a modification thereof may be performed.
[458] [Process-820]
[459] Subsequently, an etching mask layer 21 made of a negative resist material is formed on the entire surface (see FIG. 20B). That is, the "etching mask layer forming process" is performed.
[460] [Process-830]
[461] Then, in the same manner as in [Step-230] of Example 2, exposure light (specifically, ultraviolet light) is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as an exposure mask. After exposing the first etching mask layer 21 above the hole 11A (see FIG. 21A), the electrons located at the bottom of the opening 14 are developed by developing the etching mask layer 21. The etching mask layer 21 is left on the discharge portion forming layer 20A (see FIG. 21B). That is, the "etching mask layer exposure and development process" is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, the exposure light is applied to a portion of the etching mask layer 21 that should not be exposed to the exposure light. It is preferable to arrange the exposure light shielding material (mask 19) on the back surface (second surface) side of the supporting member 10 so as not to be irradiated.
[462] [Process-840]
[463] Thereafter, in the same manner as in [Step-240] of Example 2 or in the same manner as in the modification of [Step-240], the electron-emitting portion forming layer 20A is formed using the etching mask layer 21. After etching the electron-emitting part forming layer 20A by using the above, the etching mask layer 21 is removed, and the electron-emitting part 15 forming the electron-emitting part forming layer 20A on the light transmitting layer 25 is formed. Form (see FIG. 22). That is, the "electron emission formation process on the light transmission layer based on etching" is performed. The electron emitting portion 15 is formed self-aligning with respect to the hole 11A. That is, the electron emission unit 15 can be obtained by the back exposure method, and the electrons are self-aligned with respect to the opening 14 at the bottom of the opening 14 formed in the gate electrode 13 and the insulating layer 12. The discharge part 15 may be formed.
[464] [Process-850]
[465] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[466] Example 9
[467] Example 9 relates to a method of manufacturing a field emission device according to the third aspect of the present invention, and a method of manufacturing a display device according to the third aspect of the present invention, and furthermore, a field emission element according to the second aspect of the present invention. And display devices.
[468] Hereinafter, a method of manufacturing the field emission device and the display device in Example 9 will be described with reference to FIGS. 23A, 23B, and 24A and 24B.
[469] [Process-900]
[470] First, in the same manner as in [Step-700] of Example 7, the " cathode electrode forming step " and " light transmitting layer forming step "
[471] [Process-910]
[472] Thereafter, in the same manner as in [Step-310] of Example 3, an insulating layer 12A made of a non-photosensitive material that transmits exposure light is formed over the entire surface. That is, "the formation process of the insulating layer which consists of an exposure-sensitive non-photosensitive material" is performed.
[473] [Process-920]
[474] Subsequently, in the same manner as in [Step-320] of Example 3, on the insulating layer, a gate electrode 13A made of a non-photosensitive material that transmits exposure light and extending in a second direction different from the first direction is formed. Form. In other words, " the process of forming the gate electrode made of the non-photosensitive material "
[475] [Process-930]
[476] Thereafter, in the same manner as in [Step-330] of Example 3, an etching mask layer 21A made of a positive resist material is formed on the gate electrode 13A and the insulating layer 12A (Fig. 23). (A) of). That is, "the etching mask layer forming process on the insulating layer of a gate electrode" is performed.
[477] [Process-940]
[478] Next, in the same manner as in [Step-940] of Example 3, the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as an exposure mask, and the etching mask layer ( After exposing 21A) (see FIG. 23B), the etching mask layer 21A is developed to form a mask layer opening 22A in the portion of the etching mask layer 21A above the hole 11A. (See FIG. 24A). That is, the "mask layer opening forming process to the etching mask layer" is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, the exposure light is exposed to a portion of the etching mask layer 21A which should not be exposed to the exposure light. In order not to irradiate, it is preferable to arrange | position the exposure light shielding material (mask 19) on the back surface (2nd surface) side of the support member 10. As shown in FIG.
[479] [Process-950]
[480] Thereafter, in the same manner as in [Step-350] of Example 3, the gate electrode 13A and the insulating layer 12A below the mask layer opening 22A were etched using the etching mask layer 21A. Thereafter, the etching mask layer 21A is removed, whereby an opening 14 is formed in the insulating layer 12A and the gate electrode 13A above the hole 11A, and the light is formed at the bottom of the opening 14. The transparent layer 25 is exposed (see FIG. 24B). In addition, the opening 14 preferably has a diameter larger than the diameter of the hole 11A, and the opening 14 can be achieved by over-etching the insulating layer 12A and the gate electrode 13A. . Alternatively, in step [940], a method of excessively exposing the insulating layer 12A and the gate electrode 13A (i.e., an overexposure method) and / or the insulating layer 12A and the gate electrode The excessively developed method (ie, the overdeveloped method) of (13A) may be used.
[481] [Process-960]
[482] Subsequently, [Step-740] ("Step of Forming Electron-Emitting Part Formation Layer Made of Photosensitive Material" and [Step-750] ("Step of Forming Electron-Emitting Part onto Light Transmitting Layer by Exposure and Development") ).
[483] [Process-970]
[484] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[485] Example 10
[486] Example 10 relates to a method for manufacturing a field emission device according to the second aspect of the present invention, and a method for manufacturing a display device according to the second aspect, and furthermore, a field emission device according to the second aspect of the present invention. And display devices.
[487] Hereinafter, the method of manufacturing the field emission device and the display device according to the tenth embodiment will be described with reference to FIGS. 25A, 25B, 26A, 27B, 27A, and 27B. And FIG. 28 (A), (B), and FIG. 29 are demonstrated.
[488] [Process-1000]
[489] First, [Step-700] ("Cathode Electrode Formation Process" and "Light Transmitting Layer Forming Process") of Example 7 and [Step-310] of Example 3 ("Insulating Layer Made of Exposed Light Transmissive Non-Guam Substance) Forming step ") and [Step-320] (" Formation step of gate electrode composed of non-sensitive Guam material ").
[490] [Step-1010]
[491] Thereafter, a first etching mask layer 23A made of a positive resist material is formed on the gate electrode 13A and the insulating layer 12A (see FIG. 25A). That is, "the etching mask layer forming process on the insulating layer of a gate electrode" is performed.
[492] [Step-1020]
[493] Next, the exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as an exposure mask, and the first etching mask layer 23A is exposed. (See FIG. 25B), the first etching mask layer 23A is developed to form a mask layer opening 24A in the portion of the first etching mask layer 23A above the hole 11A. That is, the "mask layer opening formation process to a 1st etching mask layer" is performed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 with the hole 11A as the exposure mask, the portion of the first etching mask layer 23A which should not be irradiated with the exposure light is provided. In order not to irradiate exposure light, it is preferable to arrange | position the exposure light shielding material (mask 19) on the back surface (2nd surface) side of the support member 10. As shown in FIG.
[494] [Step-1030]
[495] Thereafter, the gate electrode 13A and the insulating layer 12A under the mask layer opening 24A are etched using the first etching mask layer 23A, and then the first etching mask layer 23A is removed. Thus, an opening 14 is formed in the insulating layer 12A and the gate electrode 13A above the hole 11A, and the light transmitting layer 25 is exposed at the bottom of the opening 14 (Fig. 26 (B)). In addition, the opening 14 preferably has a diameter larger than the diameter of the hole 11A, and thus the opening 14 can be achieved by over-etching the insulating layer 12A and the gate electrode 13A. . Alternatively, in step [420], a method of excessively exposing the insulating layer 12A and the gate electrode 13A (i.e., an overexposure method) and / or the insulating layer 12A and the gate electrode The excessively developed method (ie, the overdeveloped method) of (13A) may be used.
[496] [Step-1040]
[497] Next, in the same manner as in [Step-210] of the eighth embodiment or a modification thereof, the " step of forming an electron-emitting part formation layer made of a non-photosensitive material " is executed (see FIG. 27A).
[498] [Process-1050]
[499] Thereafter, a second etching mask layer 23B made of a negative resist material is formed on the entire surface (see FIG. 27B). That is, the "second etching mask layer forming process" is performed.
[500] [Process-1060]
[501] Then, using the hole 11A as an exposure mask, exposure light (specifically, ultraviolet rays) is irradiated from the back (second surface) side of the supporting member 10, and the second etching mask layer (above the hole 11A) ( After exposing 23B (see FIG. 28A), the second etching mask layer 23B is developed to form a second etching mask on the electron-emitting portion forming layer 20A located at the bottom of the opening 14. The layer 23B is left (see FIG. 28B). That is, the "second etching mask layer exposure and development process" is executed. In addition, when the exposure light is irradiated from the back (second surface) side of the supporting member 10 using the hole 11A as the exposure mask, the portion of the second etching mask layer 23B which should not be irradiated with the exposure light is provided. In order not to irradiate exposure light, it is preferable to arrange | position the exposure light shielding material (mask 19) on the back surface (2nd surface) side of the support member 10. As shown in FIG.
[502] [Process-1070]
[503] Next, in the same manner as in the [Step-240] of the second embodiment or a modification thereof, the electron emitting portion forming layer 20A is etched using the second etching mask layer 23B, and then the second etching mask layer is etched. 23B is removed, and the electron emission part 15 which consists of 20 A of electron emission part formation layers is formed on the light transmission layer 25 (refer FIG. 29).
[504] [Process-1080]
[505] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[506] Example 11
[507] Example 11 relates to a method of manufacturing a field emission device according to the fourth aspect of the present invention, and a method of manufacturing a display device according to the fourth aspect, and furthermore, a field emission element according to the second aspect of the present invention. And display devices.
[508] Hereinafter, a method of manufacturing the field emission device and the display device in Example 11 will be described with reference to FIGS. 30A, 30B and 31.
[509] [Step-1100]
[510] First, in the same manner as in [Step-700] of Example 7, “cathode electrode formation step” and “light transmitting layer formation step” are performed. The cathode electrode 11 extends in the first direction (paper vertical direction in the drawing).
[511] [Step-1110]
[512] Next, in the same manner as in [Step-510] of the fifth embodiment, an insulating layer 12b made of a photosensitive material is formed on the entire surface. That is, "the formation process of the insulating layer which consists of a photosensitive material" is performed.
[513] [Step-1120]
[514] Subsequently, in the same manner as in [Step-520] of Example 5, on the insulating layer 12b, it is made of a photosensitive material that transmits exposure light, and is a second direction different from the first direction (left and right direction of drawing in the drawing). To form a gate electrode 13b (see FIG. 30A). That is, the "step of forming a gate electrode composed of a photosensitive material which transmits exposure light" is executed.
[515] [Step-1130]
[516] Next, after the exposure light (specifically, ultraviolet rays) is irradiated to the gate electrode 13b and the insulating layer 12b from the surface (first surface) side of the supporting member 10 (see FIG. 30B), the gate electrode ( 13b and the insulating layer 12b are developed, and therefore, the openings 14 are formed in the gate electrode 13b and the insulating layer 12b above the holes 11a, and light transmission is performed at the bottom of the openings 14. The layer 25 is exposed (see FIG. 31). That is, the "light transmission layer exposure process in the bottom part of opening part" is performed. In the exposure of the gate electrode 13 and the insulating layer 12b, an exposure light shielding material (mask 19a) having an exposure light shielding portion larger than the hole 11a is formed on the surface of the support member 10 (first surface). It is preferable to arrange on the side.
[517] [Step-1140]
[518] Subsequently, [Step-740] ("Formation of Formation Layer of Electron Emission Part Formed by Photosensitive Material") of Example 7 and [Step-750] ("Emission Formation Step on Light Transmissive Layer by Exposure and Development") ).
[519] [Process-1150]
[520] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[521] In addition, the material constituting the insulating layer and the gate electrode may be made positive. In this case, in [Step-1130], the portion of the insulating layer and the gate electrode to which the exposure light is irradiated may be a portion in which the opening must be formed.
[522] (Example 12)
[523] Example 12 relates to a method of manufacturing the field emission device according to the fourth aspect of the present invention and a method of manufacturing the display device according to the fourth aspect, or the field emission device and the display apparatus according to the second aspect of the present invention. It is about.
[524] Hereinafter, the method of manufacturing the field emission device and the display device in Example 12 will be described with reference to FIGS. 30A, 30B, 31, 20A, 20B, 21A, 21B, and 22 again.
[525] [Process-1200]
[526] First, in the same manner as in [Step-700] of Example 7, the " cathode electrode forming step and light transmitting layer forming step "
[527] [Step-1210]
[528] Thereafter, in the same manner as in [Step-1110], [Step-1120], and [Step-1130] of Example 11, "Step of Forming Insulating Layer Made of Photosensitive Material" and "Photosensitive Material that Transmit Exposure Light". The formation process of the formed gate electrode "and the" light transmission layer exposure process in the bottom part of an opening part "are performed (refer FIG. 30A, 30B, and FIG. 31).
[529] [Step-1220]
[530] Subsequently, in the same manner as in [Step-210] of Example 2 or a modification thereof, the " step of forming an electron-emitting forming layer made of a non-photosensitive material " In addition, in the same manner as in [Step-220] of Example 2, the “etching mask layer forming step” is executed (see FIG. 20B).
[531] [Step-1230]
[532] Then, in the same manner as in [Step-230] of Example 2, the “etching mask layer exposure and development step” is executed (see Figs. 21A and 21B). Thereafter, in the same manner as in [Step-240] of Example 2 or a modification thereof, the " electron emission forming step to cathode electrode based on etching " is performed (see Fig. 22).
[533] [Step-1240]
[534] Thereafter, the display device is assembled in the same manner as in the [Step-160] of the first embodiment.
[535] As mentioned above, although this invention was demonstrated based on the Example of this invention, this invention is not limited to this. The construction and manufacture of the anode panel, the cathode panel, the display device, and the field emission device described as an embodiment of the present invention are examples, and can be changed as appropriate, and the method of manufacturing the anode panel and the cathode panel, the display device or the field emission device, and various Conditions and materials used are examples, and can be changed by enemy. Alternatively, various materials used in the production of the anode panel and the cathode panel are also examples, and can be changed as appropriate. In the display apparatuses, all of them have been described using color display as an example, but monochrome display can also be used.
[536] A focus electrode may be provided in the display device. The focus electrode is an electrode for focusing the trajectory of the emission electrons directed to the anode electrode emitted from the opening, and thus enabling the improvement of the luminance and the prevention of optical crosstalk between adjacent pixels. The potential difference between the anode electrode and the cathode electrode is an order of several kilovolts, the distance between the anode electrode and the cathode electrode is relatively long, and in the so-called high voltage type cold cathode field emission display device, the focus electrode is particularly effective. Do. A relative negative voltage is applied to the focus electrode in the focus electrode control circuit. The focus electrode does not necessarily need to be provided for each cold cathode field emission element. For example, the focus electrode extends over a predetermined arrangement direction of the cold cathode field emission element, thereby providing a common focusing effect to the plurality of cold cathode field emission elements. Can be crazy
[537] Such a focus electrode is formed by, for example, forming an insulating film composed of, for example, SiO ₂ on both surfaces of a metal plate composed of 42% Ni-Fe alloy having a thickness of several tens of micrometers, and then patching or etching the region corresponding to each pixel. It can manufacture by forming an opening part. Then, the cathode panel, the metal plate, and the anode panel are hit, and the frame is disposed on the outer peripheral portion of both panels, and the heat treatment is performed to bond the insulating film formed on one surface of the metal plate and the insulating layer 12 to the other side of the metal plate. The display device can be completed by adhering the insulating film formed on the surface and the anode panel, integrating these members, and then vacuum encapsulating.
[538] The gate electrode and the effective region may be formed as a gate electrode in which a sheet-like conductive material (having the first opening) is covered. In this case, a positive voltage is applied to this gate electrode. Then, a switching element composed of, for example, a TFT is provided between the cathode electrode constituting each pixel and the cathode electrode control circuit and applied to the cathode electrode constituting each pixel by the operation of the switching element. The state is controlled and the light emitting state of the pixel is controlled.
[539] Alternatively, the cathode electrode may be a cathode electrode in which the effective area is covered with one sheet of conductive material. In this case, a voltage is applied to this cathode electrode. Then, a switching element composed of, for example, a TFT is provided between the gate electrode constituting each pixel and the gate electrode control circuit and applied to the gate electrode constituting each pixel by the operation of the switching element. The state is controlled and the light emitting state of the pixel is controlled.
[540] The anode electrode may be an anode electrode in which the effective area is covered with one sheet-like electronic material, and may be one or a plurality of electron emitting units or an anode electrode unit corresponding to one or more pixels. It may also be an anode electrode. In the case where the anode electrode has the former configuration, such an anode electrode may be connected to the anode electrode control circuit, and in the case where the anode electrode has the latter configuration, each anode electrode unit may be connected to the anode electrode control circuit, for example.
[541] In some cases, the electric field according to the first to the first embodiment, the second to the second form, the second to the second form, the third to the third form, the fourth to fourth form, and the fourth to fourth form of the present invention In the method of manufacturing the emitting device or the display device, in the step of forming the electron emission forming layer and the electron emitting portion, the selective growth region forming layer and the selective growth region may be formed instead. In this case, after finally forming the selective growth region, an electron emission portion made of carbon nanotubes, carbon nanofibers, or the like may be formed on the selective growth region by CVD. The selective growth region may be formed based on a material having a kind of catalysis for forming the electron emitting portion by CVD.
[542] According to the present invention, since the electron emission portion is formed using the back exposure type, the electron emission portion can be formed in the bottom of the opening in a self-aligned manner with respect to the opening formed in the gate electrode and the insulating layer. In addition, in the method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to aspects 1A to 1D, 3A to 3D of the present invention, a back exposure method is disclosed. By forming the openings, the openings can be formed in the gate electrode and the insulating layer in a self-aligning manner with respect to the holes.
[543] Therefore, as in the prior art, it is possible to suppress the occurrence of display unevenness caused by the exposure position dispersion with the exposure mask due to deformation or compression of the support member.
[544] Moreover, since the back exposure method using a hole as an exposure mask can be adopted, the number of photo masks is reduced, and the position adjustment process during exposure is also reduced or omitted, thereby reducing the manufacturing cost and providing a cheap cold cathode field emission display device. can do. In addition, by patterning with high sharpness, the distance from the gate electrode to the electron emitting portion can be shortened, and the electron emission voltage can be reduced. Therefore, the power consumption can be reduced, and a cheap cold cathode field emission display can be manufactured. Moreover, since the screen printing method can be mainly adopted, it is not necessary to frequently use the manufacturing method of the expensive semiconductor device, and finally, the manufacturing cost of the cold cathode field emission display device can be reduced.

权利要求:
Claims (28)
[1" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light and extending in the first direction;
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(D) As an exposure mask, exposure light is irradiated from the back side of the supporting member through the hole to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to develop the insulating layer and the gate over the part. Removing the electrode to form an opening having a diameter larger than the diameter of the hole through the insulating layer on the hole and the gate electrode, and exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) The exposure mask is irradiated with exposure light from the back side of the supporting member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed to develop the electron-emitting portion on the cathode electrode and in the hole. A method of manufacturing a cold cathode field emission device comprising the step of forming an electron emission section composed of a formation layer.
[2" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light and extending in the first direction;
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(D) As an exposure mask, exposure light is irradiated from the back side of the supporting member through the hole to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to develop the insulating layer and the gate over the part. Removing the electrode to form an opening having a diameter larger than the diameter of the hole through the insulating layer on the hole and the gate electrode, and exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) The exposure mask is irradiated with exposure light from the back side of the supporting member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed to develop the electron-emitting portion on the cathode electrode and in the hole. A cold cathode field emission display device formed by a process of forming an electron emission section composed of a formation layer.
[3" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(D) The exposure mask is irradiated with exposure light from the back side of the support member as the exposure mask to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to develop the insulating layer and the gate electrode over the hole. Removing a portion, forming an opening having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole, and exposing a portion of the cathode electrode at the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) forming an etching mask layer made of a resist material on the entire surface;
(G) An electron-emitting part which irradiates exposure light from the back side of a support member as said exposure mask from the back side, exposes an etching mask layer to the part on a hole, develops an etching mask layer, and is located in the bottom part of an opening part. Leaving an etching mask layer on the formation layer;
(H) etching the electron-emitting part formation layer using the etching mask layer, and then removing the etching mask layer to form an electron-emitting part composed of the electron-emitting part formation layer in the cathode and the hole. How to make.
[4" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(D) The exposure mask is irradiated with exposure light from the back side of the support member as the exposure mask to expose the insulating layer and the gate electrode over the hole, and the insulating layer and the gate electrode are developed to develop the insulating layer and the gate electrode over the hole. Removing a portion, forming an opening having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole, and exposing a portion of the cathode electrode at the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) forming an etching mask layer made of a resist material on the entire surface;
(G) An electron-emitting part which irradiates exposure light from the back side of a support member as said exposure mask from the back side, exposes an etching mask layer to the part on a hole, develops an etching mask layer, and is located in the bottom part of an opening part. Leaving an etching mask layer on the formation layer;
(H) The cold cathode field emission formed by the process of forming the electron emission part which consists of an electron emission part formation layer in a cathode electrode and a hole after etching an electron emission part formation layer using an etching mask layer. Display.
[5" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(D) forming an etching mask layer made of a resist material on the gate electrode and the insulating layer,
(E) After exposing the etching mask layer by exposing the exposure light from the back side of the supporting member through the hole as the exposure mask, the etching mask layer is developed to form a mask layer opening in the portion of the etching mask layer above the hole. Process to do,
(F) After etching the gate electrode and the insulating layer under the mask layer opening using the etching mask layer, the opening layer having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole by removing the etching mask layer. Forming a portion and exposing a portion of the cathode electrode at the bottom of the opening;
(G) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(H) The exposure mask is irradiated with the exposure light from the back side of the supporting member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed, and the electrons in the cathode and the hole A method of manufacturing a cold cathode field emission device comprising the step of forming an electron emission section composed of an emission section formation layer.
[6" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the manufacturing method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(D) forming an etching mask layer made of a resist material on the gate electrode and the insulating layer,
(E) After exposing the etching mask layer by exposing the exposure light from the back side of the supporting member through the hole as the exposure mask, the etching mask layer is developed to form a mask layer opening in the portion of the etching mask layer above the hole. Process to do,
(F) After etching the gate electrode and the insulating layer under the mask layer opening using the etching mask layer, the opening layer having a diameter larger than the diameter of the hole in the insulating layer and the gate electrode on the hole by removing the etching mask layer. Forming a portion and exposing a portion of the cathode electrode at the bottom of the opening;
(G) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(H) The exposure mask is irradiated with the exposure light from the back side of the supporting member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed. A cold cathode field emission display device formed by a process of forming an electron emission section composed of an emission section formation layer.
[7" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(D) forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer,
(E) After exposing the first etching mask layer by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the first etching mask layer is developed to form a portion of the first etching mask layer on the hole. Forming a mask layer opening in the
(F) After etching the gate electrode and the insulating layer under the mask layer opening by using the first etching mask layer, the first etching mask layer is removed so that the insulating layer on the hole and the gate electrode are larger than the diameter of the hole. Forming an opening having a diameter and exposing a portion of the cathode electrode to the bottom of the opening;
(G) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(H) forming a second etching mask layer made of a resist material on the entire surface;
(I) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole, the second etching mask layer on the hole is exposed, and the second etching mask layer is developed to be located at the bottom of the opening. Leaving a second etching mask layer on the electron-emitting part forming layer;
(J) etching the electron-emitting part forming layer using the second etching mask layer, and then removing the second etching mask layer to form an electron-emitting part composed of the electron-emitting part forming layer in the cathode electrode and the hole. Method for manufacturing a cold cathode field emission device.
[8" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material that transmits exposure light on the entire surface;
(C) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(D) forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer,
(E) After exposing the first etching mask layer by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the first etching mask layer is developed to form a portion of the first etching mask layer on the hole. Forming a mask layer opening in the
(F) After etching the gate electrode and the insulating layer under the mask layer opening by using the first etching mask layer, the first etching mask layer is removed so that the insulating layer on the hole and the gate electrode are larger than the diameter of the hole. Forming an opening having a diameter and exposing a portion of the cathode electrode to the bottom of the opening;
(G) forming an electron-emitting part forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(H) forming a second etching mask layer made of a resist material on the entire surface;
(I) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole, the second etching mask layer on the hole is exposed, and the second etching mask layer is developed to be located at the bottom of the opening. Leaving a second etching mask layer on the electron-emitting part forming layer;
(J) Etching the electron-emitting portion forming layer using the second etching mask layer, and then removing the second etching mask layer to form an electron-emitting portion composed of the electron-emitting portion forming layer in the cathode and the hole. Cold cathode field emission display.
[9" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(D) After the exposure light is irradiated to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form an opening having a diameter larger than the diameter of the hole in the gate electrode and the insulating layer on the hole. Exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed. A method of manufacturing a cold cathode field emission device comprising the step of forming an electron emission section composed of an emission section formation layer.
[10" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(D) After the exposure light is irradiated to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form an opening having a diameter larger than the diameter of the hole in the gate electrode and the insulating layer on the hole. Exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, and the electron-emitting portion forming layer on the hole is exposed, and then the electron-emitting portion forming layer is developed, and the electron is spread over the hole on the cathode electrode. A cold cathode field emission display device formed by a process of forming an electron emission section composed of an emission section formation layer.
[11" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(D) After the exposure light is irradiated to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form an opening having a diameter larger than the diameter of the hole in the gate electrode and the insulating layer on the hole. Exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) forming an etching mask layer made of a resist material on the entire surface;
(G) Forming an electron emitting portion located at the bottom of the opening by irradiating exposure light from the back side of the supporting member through the hole as the exposure mask, exposing the etching mask layer on the hole, and developing the etching mask layer. Leaving an etching mask layer on the layer,
(H) Etching the electron-emitting portion forming layer using the etching mask layer, removing the etching mask layer, and forming an electron-emitting portion composed of the electron-emitting portion forming layer in the cathode and the hole. Manufacturing method of device.
[12" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming an insulating layer made of a photosensitive material on the entire surface;
(C) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(D) After the exposure light is irradiated to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form an opening having a diameter larger than the diameter of the hole in the gate electrode and the insulating layer on the hole. Exposing a portion of the cathode electrode to the bottom of the opening;
(E) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(F) forming an etching mask layer made of a resist material on the entire surface;
(G) Forming an electron emitting portion located at the bottom of the opening by irradiating exposure light from the back side of the supporting member through the hole as the exposure mask, exposing the etching mask layer on the hole, and developing the etching mask layer. Leaving an etching mask layer on the layer,
(H) After etching the electron-emitting portion forming layer using the etching mask layer, the cold-cathode electric field formed by the step of removing the etching mask layer and forming the electron-emitting portion composed of the electron-emitting portion forming layer in the cathode and the hole. Emission indicator.
[13" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(E) After exposing the insulating layer and the gate electrode over the hole by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the insulating layer and the gate electrode are developed to develop the insulating layer over the hole and Removing the gate electrode to form an opening in the insulating layer on the hole and the gate electrode, and exposing the light transmitting layer to the bottom of the opening;
(F) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(G) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole as the exposure mask, and the electron-emitting part forming layer on the hole is exposed, and then the electron-emitting part forming layer is developed and the electron-emitting part is formed on the light transmitting layer. A method of fabricating a cold cathode field emission device comprising the step of forming an electron emission section composed of a sub-layer.
[14" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(E) After exposing the insulating layer and the gate electrode over the hole by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the insulating layer and the gate electrode are developed to develop the insulating layer over the hole and Removing the gate electrode to form an opening in the insulating layer on the hole and the gate electrode, and exposing the light transmitting layer to the bottom of the opening;
(F) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(G) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole as the exposure mask, and the electron-emitting part forming layer on the hole is exposed, and then the electron-emitting part forming layer is developed and the electron-emitting part is formed on the light transmitting layer. A cold cathode field emission display device formed by a process of forming an electron emission section consisting of sub-layers.
[15" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(E) After exposing the insulating layer and the gate electrode over the hole by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the insulating layer and the gate electrode are developed to develop the insulating layer over the hole and Removing the gate electrode to form an opening in the insulating layer on the hole and the gate electrode, and exposing the light transmitting layer to the bottom of the opening;
(F) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(G) forming an etching mask layer composed of a resist material on the entire surface;
(H) The electron-emitting portion located at the bottom of the opening portion by developing the etching mask layer after irradiating exposure light from the back side of the supporting member through the hole as the exposure mask and exposing the electron-emitting portion forming layer on the hole. Leaving an etching mask layer on the formation layer;
(I) etching the electron-emitting part formation layer using the etching mask layer, then removing the etching mask layer and forming an electron-emitting part composed of the electron-emitting part formation layer on the light transmitting layer. Manufacturing method of device.
[16" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer and extending in a second direction different from the first direction;
(E) After exposing the insulating layer and the gate electrode over the hole by irradiating exposure light from the back side of the supporting member as the exposure mask through the hole, the insulating layer and the gate electrode are developed to develop the insulating layer over the hole and Removing the gate electrode to form an opening in the insulating layer on the hole and the gate electrode, and exposing the light transmitting layer to the bottom of the opening;
(F) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(G) forming an etching mask layer composed of a resist material on the entire surface;
(H) The electron-emitting portion located at the bottom of the opening portion by developing the etching mask layer after irradiating exposure light from the back side of the supporting member through the hole as the exposure mask and exposing the electron-emitting portion forming layer on the hole. Leaving an etching mask layer on the formation layer;
(I) After etching the electron-emitting part formation layer using an etching mask layer, the cold cathode electric field formed by the process of removing an etching mask layer and forming the electron emission part comprised by an electron-emitting part formation layer on a light transmission layer. Emission indicator.
[17" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a non-photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(E) forming an etching mask layer made of a resist material on the gate electrode and the insulating layer,
(F) After exposing the etching mask layer by exposing the exposure light from the back side of the supporting member as the exposure mask through the hole, the etching mask layer is developed to form a mask layer opening through the etching mask layer on the hole. Process to do,
(G) After etching the gate electrode and the insulating layer below the mask layer opening using the etching mask layer, the etching mask layer is removed to form an opening through the insulating layer and the gate electrode over the hole, Exposing the light transmitting layer to the bottom;
(H) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(I) The exposure mask is irradiated with the exposure light from the back side of the supporting member as the exposure mask, and the electron emitting portion forming layer on the hole is exposed, and then the electron emitting portion forming layer is developed and the electron emitting portion is formed on the light transmitting layer. A method of manufacturing a cold cathode field emission device comprising the step of forming an electron emission section composed of a formation layer.
[18" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a non-photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(E) forming an etching mask layer made of a resist material on the gate electrode and the insulating layer,
(F) After exposing the etching mask layer by exposing the exposure light from the back side of the supporting member as the exposure mask through the hole, the etching mask layer is developed to form a mask layer opening through the etching mask layer on the hole. Process to do,
(G) After etching the gate electrode and the insulating layer below the mask layer opening using the etching mask layer, the etching mask layer is removed to form an opening through the insulating layer and the gate electrode over the hole, Exposing the light transmitting layer to the bottom;
(H) forming an electron-emitting part forming layer made of a photosensitive material at least in the opening;
(I) The exposure mask is irradiated with the exposure light from the back side of the supporting member as the exposure mask, and the electron emitting portion forming layer on the hole is exposed, and then the electron emitting portion forming layer is developed and the electron emitting portion is formed on the light transmitting layer. A cold cathode field emission display device formed by a process of forming an electron emission section composed of a formation layer.
[19" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a non-photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(E) forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer,
(F) The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, the first etching mask layer is exposed, and then the first etching mask layer is developed to develop the first etching mask layer on the hole. Forming a mask layer opening in a portion thereof;
(G) After etching the gate electrode and the insulating layer under the mask layer opening using the first etching mask layer, the openings are formed in the insulating layer and the gate electrode over the hole by removing the first etching mask layer. Exposing the light transmitting layer to the bottom of the opening;
(H) forming at least an opening the electron emitting portion forming layer made of a non-photosensitive material that transmits the exposure light;
(I) forming a second etching mask layer made of a resist material on the entire surface;
(J) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole, the second etching mask layer on the hole is exposed, and then the second etching mask layer is developed to be located at the bottom of the opening. Leaving a second etching mask layer on the electron-emitting part forming layer to be formed;
(K) After etching the electron emitting portion forming layer using the second etching mask layer, the second etching mask layer was removed, and the electron emitting portion composed of the electron emitting portion forming layer composed of the electron emitting portion forming layer on the light transmitting layer. A method for manufacturing a cold cathode field emission device comprising the step of forming.
[20" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer made of a non-photosensitive material that transmits the exposure light on the entire surface;
(D) forming a gate electrode formed of a non-photosensitive material that transmits exposure light on the insulating layer and extending in a second direction different from the first direction;
(E) forming a first etching mask layer made of a resist material on the gate electrode and the insulating layer,
(F) The exposure mask is irradiated with the exposure light from the back side of the support member as the exposure mask, the first etching mask layer is exposed, and then the first etching mask layer is developed to develop the first etching mask layer on the hole. Forming a mask layer opening in a portion thereof;
(G) After etching the gate electrode and the insulating layer under the mask layer opening using the first etching mask layer, the openings are formed in the insulating layer and the gate electrode over the hole by removing the first etching mask layer. Exposing the light transmitting layer to the bottom of the opening;
(H) forming at least an opening the electron emitting portion forming layer made of a non-photosensitive material that transmits the exposure light;
(I) forming a second etching mask layer made of a resist material on the entire surface;
(J) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole, the second etching mask layer on the hole is exposed, and then the second etching mask layer is developed to be located at the bottom of the opening. Leaving a second etching mask layer on the electron-emitting part forming layer to be formed;
(K) After etching the electron emitting portion forming layer using the second etching mask layer, the second etching mask layer was removed, and the electron emitting portion composed of the electron emitting portion forming layer composed of the electron emitting portion forming layer on the light transmitting layer. A cold cathode field emission display device formed by a forming process.
[21" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(E) After exposing the gate electrode and the insulating layer to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form openings in the gate electrode and the insulating layer over the holes, and light transmission at the bottom of the opening. Exposing the layer,
(F) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(G) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole as the exposure mask, and the electron-emitting part forming layer on the hole is exposed, and then the electron-emitting part forming layer is developed and the electron-emitting part is formed on the light transmitting layer. A method of fabricating a cold cathode field emission device comprising the step of forming an electron emission section composed of a sub-layer.
[22" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(E) After exposing the gate electrode and the insulating layer to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form openings in the gate electrode and the insulating layer over the holes, and light transmission at the bottom of the opening. Exposing the layer,
(F) forming an electron emitting portion forming layer made of a photosensitive material at least in the opening;
(G) The exposure mask is irradiated with the exposure light from the back side of the supporting member through the hole as the exposure mask, and the electron-emitting part forming layer on the hole is exposed, and then the electron-emitting part forming layer is developed and the electron-emitting part is formed on the light transmitting layer. A cold cathode field emission display device formed by a process of forming an electron emission section consisting of sub-layers.
[23" claim-type="Currently amended] (A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(E) After exposing the gate electrode and the insulating layer to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form openings in the gate electrode and the insulating layer over the holes, and light transmission at the bottom of the opening. Exposing the layer,
(F) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(G) forming an etching mask layer composed of a resist material on the entire surface;
(H) The electron-emitting portion located at the bottom of the opening by irradiating exposure light from the back side of the supporting member through the hole as the exposure mask, exposing the etching mask layer on the hole, and developing the etching mask layer. Leaving an etching mask layer on the formation layer;
(I) etching the electron-emitting part formation layer using the etching mask layer, then removing the etching mask layer and forming an electron-emitting part composed of the electron-emitting part formation layer on the light transmitting layer. Manufacturing method of device.
[24" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. In the production method of,
The cold cathode field emission device
(A) forming a cathode electrode on the surface of the support member that transmits the exposure light, the cathode having a hole exposed at the bottom and made of a material which does not transmit the exposure light, and extending in the first direction; ,
(B) forming a light transmitting layer composed of a conductive material or a resistive material that transmits exposure light at least in the hole;
(C) forming an insulating layer composed of a photosensitive material on the entire surface;
(D) forming a gate electrode formed of a photosensitive material on the insulating layer that transmits exposure light and extending in a second direction different from the first direction;
(E) After exposing the gate electrode and the insulating layer to the gate electrode and the insulating layer from the surface side of the supporting member, the gate electrode and the insulating layer are developed to form openings in the gate electrode and the insulating layer over the holes, and light transmission at the bottom of the opening. Exposing the layer,
(F) forming an electron emitting portion forming layer made of a non-photosensitive material that transmits exposure light at least in the opening;
(G) forming an etching mask layer composed of a resist material on the entire surface;
(H) The electron-emitting portion located at the bottom of the opening by irradiating exposure light from the back side of the supporting member through the hole as the exposure mask, exposing the etching mask layer on the hole, and developing the etching mask layer. Leaving an etching mask layer on the formation layer;
(I) After etching the electron-emitting part formation layer using an etching mask layer, the cold cathode electric field formed by the process of removing an etching mask layer and forming the electron emission part comprised by an electron-emitting part formation layer on a light transmission layer. Method of manufacturing the emission display device.
[25" claim-type="Currently amended] (a) a cathode electrode provided on the support member and extending in the first direction,
(b) an insulating layer formed on the support member and the cathode electrode,
(c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
(d) an opening formed in the via electrode and the insulating layer,
(e) including an electron emitting unit,
Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
In the portion of the cathode electrode located at the bottom of the opening, a hole reaching the support member is provided,
A cold cathode field emission device in which an electron-emitting portion is formed in a portion and a hole of a cathode electrode located at the bottom of an opening.
[26" claim-type="Currently amended] (a) a cathode electrode provided on the support member and extending in the first direction,
(b) an insulating layer formed on the support member and the cathode electrode,
(c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
(d) an opening formed in the via electrode and the insulating layer,
(e) including an electron emitting unit,
Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
At least the light transmitting layer is formed in the hole,
An electron emission unit is a cold cathode field emission device formed on a light transmitting layer located at the bottom of the opening.
[27" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. To
The cold cathode field emission device
(a) a cathode electrode provided on the support member and extending in the first direction,
(b) an insulating layer formed on the support member and the cathode electrode,
(c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
(d) an opening formed through the gate electrode and the insulating layer,
(e) including an electron emitting unit,
Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
And the electron-emitting portion is formed in a portion and a hole of the cathode electrode positioned at the bottom of the opening.
[28" claim-type="Currently amended] A cold cathode field emission display for arranging a substrate having an anode electrode and a phosphor layer and a support member having a cold cathode field emission element so that the phosphor layer and the cold cathode field emission element face each other, and bonding the substrate and the support member at the periphery. To
The cold cathode field emission device
(a) a cathode electrode provided on the support member and extending in the first direction,
(b) an insulating layer formed on the support member and the cathode electrode,
(c) a gate electrode provided on the insulating layer and extending in a second direction different from the first direction;
(d) an opening formed through the gate electrode and the insulating layer,
(e) including an electron emitting unit,
Electrons are emitted from the electron emitting portion exposed at the bottom of the opening,
The portion of the cathode electrode located at the bottom of the opening is provided with a hole reaching the support member,
At least the light transmitting layer is formed in the hole,
And the electron emission portion is formed on the light transmitting layer located at the bottom of the opening.

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-03-27|Priority to JP2002088857A

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2002-03-27|Priority to JPJP-P-2002-00088857

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2003-03-26|Application filed by 소니 가부시끼 가이샤

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2003-10-04|Publication of KR20030078024A

优先权:

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申请号 | 申请日 | 专利标题

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JP2002088857A|JP3636154B2|2002-03-27|2002-03-27|Cold cathode field emission device and manufacturing method thereof, cold cathode field electron emission display device and manufacturing method thereof|

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JPJP-P-2002-00088857|2002-03-27|